采用红外、紫外光谱仪对热等静压（HIP）处理前后CVDZnS的光学透过率进行了测量,采用分析电子显微镜、金相显微镜和X射线衍射对原生CVDZnS和经热等静压（HIP）处理的CVDZnS的显微组织和晶体结构进行了分析.根据热等静压（HIP）处理前后CVDZnS光学透过率和材料内部显微结构的不同分析了热等静压过程造成CVDZnS光学性能提高的原因.研究表明:热等静压过程使得CVDZnS的晶粒尺寸有了很大提高,并且消除了原生CVDZnS在生长过程中形成的晶体缺陷,从而减小了原生CVDZnS中由于晶格缺陷和晶粒边界造成的散射损失,使得CVDZnS的光学透过率,尤其是在可见光及近红外波段,有了较大的提高.
The transmittance of CVDZnS before and after heat isostatic processing (HIP)was measured. X-ray diffraction, AEM and metaloscopy were adopted to study the microstructure
of stereotype and HIP processed CVDZnS. Based on the different microstructures of CVDZnS before and after HIP observed，the reasons why the transmittance of CVDZnS
can be improved after HIP processing was analysised. The results show that the grain size of CVDZnS is improved dramatically after HIP processing，and the defects
formed during the growth of CVDZnS are minimized, so the transmittance of CVDZnS is improved for the decrease of scatter losses at the grain boundary and structure defects.
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