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以金属Cu基板上脉冲电沉积Ni纳米晶薄膜作为催化剂,在乙醇火焰中制备了直立、无缠绕阵列碳纳米管.利用原子力显微镜(AFM)、扫描电子显微镜(SEM)、透射电镜(TEM)和激光拉曼谱仪(Raman)对不同工艺制备的Ni纳米晶薄膜和阵列碳纳米管的形貌进行了表征.结果表明:通过综合控制脉冲电沉积参数、电沉积时间和火焰中的合成时间,可以获得大面积、密集、均匀、直立、无缠绕、形态良好、重复性高的阵列碳纳米管.脉冲电沉积Ni纳米晶和合成无缠绕阵列碳纳米管的最佳工艺条件是:脉冲电沉积正、负脉冲的工作频率为154Hz、占空比为38.5%、电沉积时间为1min、基板预热至600℃、火焰中停留1min.通过对生长机理的研究发现:当电沉积时间较短时,获得的Ni纳米晶薄膜较薄,具有较高的局域粗糙程度和催化活性,有利于碳纳米管的同时大面积"拥挤生长"形成阵列结构;另外,通过调整脉冲电沉积参数,可以控制Ni纳米晶的大小,从而控制碳纳米管的长径比,当长径比较小时即可获得无缠绕的阵列碳纳米管.

参考文献

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