衬底温度对溅射法生长Cu-Al-O薄膜性能的影响

稀有金属材料与工程, 2007, 36(z1): 921-924.

衬底温度对溅射法生长Cu-Al-O薄膜性能的影响

兰伟 ^1, , 董国波 ^2, , 张铭 ^3, , 王波 ^4, , 严辉 ^5, , 王印月 ^6,

1.兰州大学物理科学与技术学院,甘肃,兰州,730000;北京工业大学材料科学与工程学院,北京,100022

2.北京工业大学材料科学与工程学院,北京,100022

3.北京工业大学材料科学与工程学院,北京,100022

4.北京工业大学材料科学与工程学院,北京,100022

5.北京工业大学材料科学与工程学院,北京,100022

6.兰州大学物理科学与技术学院,甘肃,兰州,730000

基金项目: 国家自然科学基金(60576012) 北京市属市管高等学校拔尖创新人才选拔计划(20041D0501513)

关键词： Cu-Al-O薄膜 , 衬底温度 , 透过率 , 电导率

The Effect of Substrate Temperature on the Properties of Cu-Al-O Thin Films Prepared by Sputtering

使用多晶CuAlO2陶瓷靶,利用射频磁控溅射法沉积Cu-Al-O薄膜.傅立叶变换红外光谱显示薄膜中存在与CuAlO2相关的Cu-O,Al-O和O-Cu-O键.在可见光范围内Cu-Al-O薄膜具有较好的透过性,衬底温度为400℃～500℃时薄膜透过率在60%～70%之间,计算拟合得到Cu-Al-O薄膜的直接和间接带隙能分别为3.52 eV和1.83 eV左右,与多晶CuAlO2薄膜结果一致.在近室温区薄膜符合半导体热激活导电机制,其电导率随衬底温度的升高先增大后减小,500℃沉积的薄膜导电性较好,室温电导率达到2.36×10-3 S·cm-1,这可能源于Cu-Al-O薄膜中与CuAlO2相关的键合形成情况的改善.

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