采用电泳沉积法在Si(111)衬底上制备出了GaN薄膜.用X射线衍射(XRD)、傅立叶红外吸收(FTIR)谱、X射线光电子能谱(XPS)和扫描电镜(SEM)对样品的结构、组分和形貌进行了分析.结果显示所得样品为六方纤锌矿结构的GaN多晶薄膜.
参考文献
| [1] | Fasol G .[J].Science,1996,272:1751-1752. |
| [2] | Someya T;Werner R;Forchel A et al.[J].Science,1999,285:1905-1906. |
| [3] | Nakamura S;Mukai T;Senoh M .[J].Applied Physics Letters,1994,64(13):1687-1689. |
| [4] | Song S;Lee S S;Yu S H et al.[J].Bulletin of the Korean Chemical Society,2003,24:953-956. |
| [5] | Doppalapudi D;Iliopoulos E;Basu S N et al.[J].Journal of Applied Physics,1999,85:3582-3589. |
| [6] | Wang S;Gu B;Xu Y et al.[J].Chinese Journal of Electron Devices,2002,25:1-8. |
| [7] | Yang L;Xue C;Zhuang H et al.[J].International Journal of Modern Physics B,2002,16:4267-4270. |
| [8] | Yang L;Xue C;Wang C et al.[J].Rare Metals,2003,22:221-225. |
| [9] | Boo JH.;Ho W.;Rohr C. .MOCVD of BN and GaN thin films on silicon: new attempt of GaN growth with BN buffer layer[J].Journal of Crystal Growth,1998(0):439-444. |
| [10] | Sun Y;Miyasato T;Wigmore J K .[J].Journal of Applied Physics,1999,85:3377-3379. |
| [11] | Yang Y;Ma H;Xue C et al.[J].Applied Surface Science,2002,193:254-260. |
| [12] | 魏芹芹,薛成山,孙振翠,曹文田,庄惠照.氨化Si基Ga2O3/Al2O3制备GaN薄膜[J].稀有金属材料与工程,2005(02):312-315. |
| [13] | Briggs D;Seah M P.Practical Surface Analysis[M].New York:John Wiley and Sons,1979 |
| [14] | Dongsheng Li;M. Sumiya;S. Fuke;Deren Yang;Duanlin Que;Y. Suzuki;Y. Fukuda .Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy[J].Journal of Applied Physics,2001(8):4219-4223. |
| [15] | Veal TD;Mahboob I;Piper LFJ;McConville CF;Hopkinson M .Core-level photoemission spectroscopy of nitrogen bonding in GaNxAs1-x alloys[J].Applied physics letters,2004(9):1550-1552. |
| [16] | King S W;Carlson E P;Therrien R J .[J].Journal of Applied Physics,1999,86(10):5584-5593. |
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