以金属钨靶和石墨靶反应共溅射的方法,在硅片上制备碳化钨薄膜.实验探究了功率和衬底温度对薄膜成分、质量的影响.研究表明,衬底温度为400℃时,薄膜生长致密、均匀,无裂痕;当钨靶功率为55 W,逐渐增大石墨靶功率时,薄膜成分分别为W、W2C、WC1-x.经电化学研究发现W2C、WC1-x两种薄膜均对甲醇有电催化作用,且有很高的比表面积,面积为1 cm2的W2C、WC1-x薄膜电极对应的比表面积分别为33.32 cm2和64.68 cm2.
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