通过化学镀的方法在Cu基底上制备了不同晶态的Ni-Mo-P镀层,对Ni-1.0 at％ Mo-17.0 at％合金镀层进行了200～600℃C的真空热处理后,利用X射线荧光光谱仪、X射线衍射仪、俄歇电子能谱仪、能量散射谱仪对样品的厚度、成分、物相结构进行了表征与分析.结果表明,随着P含量的增加,合金镀层的晶态由结晶到混晶、非晶转变.随着热处理温度的增加,镀层本身结晶性提高,Cu原子扩散到镀层中,从而影响镀层的晶态.通过计算可得,400和500℃时,Cu扩散量为4.14 at％、6.14 at％.Cu在Ni-1.0 at％ Mo-17.0 at％合金镀层中的扩散激活能为1.11 eV.
参考文献
| [1] | Lin JH.;Chiu SY.;Lee TL.;Tsai CM.;Chen PH.;Lin CC.;Feng MS.;Kou CS.;Shih HC.;Tsai YY. .Palladium seeding on the tantalum-insulated silicon oxide film by plasma immersion ion implantation for the growth of electroless Copper[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2000(0):592-596. |
| [2] | Dubin VM.;Zhao B.;Vasudev PK.;Ting CH.;Shachamdiamand Y. .SELECTIVE AND BLANKET ELECTROLESS COPPER DEPOSITION FOR ULTRALARGE SCALE INTEGRATION[J].Journal of the Electrochemical Society,1997(3):898-908. |
| [3] | Yoshino M;Masuda T;Yokoshima T;Sasano J;Shacham-Diamand Y;Matsuda I;Osaka T;Hagiwara Y;Sato I .Electroless diffusion barrier process using SAM on low-k dielectrics[J].Journal of the Electrochemical Society,2007(3):D122-D125. |
| [4] | Wang Zenglin;Sakaue Hiroyuki;Shingubara Shoso et al.Influence of surface oxide of sputtered TaN on displacement plating of Cu[J].Japanese Journal of Applied Physics,2003,42(4 B):1843-1846. |
| [5] | 韦顺文 .微细凹槽镀铜研究[D].中南大学,2004. |
| [6] | Y. Shacham-Diamand;Y. Sverdlov .Electrochemically deposited thin film alloys for ULSI and MEMS applications[J].Microelectronic engineering,2000(1/4):525-531. |
| [7] | A. Kohn;M. Eizenberg;Y. Shacham-Diamand;Y. Sverdlov .Characterization of electroless deposited Co(W,P) thin films for encapsulation of copper metallization[J].Materials Science & Engineering, A. Structural Materials: Properties, Misrostructure and Processing,2001(1):18-25. |
| [8] | Y.WU;C.C.WAN;Y.Y.WANG .Fabrication of Potential NiMoP Diffusion Barrier/Seed Layers for Cu Interconnects via Electroless Deposition[J].Journal of Electronic Materials,2005(5):541-550. |
| [9] | Dian-long Liu;Zhi-gang Yang;Chi Zhang .Electroless Ni-Mo-P diffusion barriers with Pd-activated self-assembled monolayer on SiO_2[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2010(1):67-75. |
| [10] | 吴建鹏,张波,王若兰.XRD在固溶体固溶度测定中的应用[J].陕西科技大学学报（自然科学版）,2005(01):35-37. |
| [11] | 余永宁;杨平;强文江.材料科学基础[M].北京:高等教育出版社,2006:47-48. |
| [12] | 王英华.X光衍射技术基础[M].北京:原子能出版社,2003:87-88. |
| [13] | Oku T.;Uekubo M.;Takahiro K.;Yamaguchi S.;Murakami M.;Kawakami E. .DIFFUSION BARRIER PROPERTY OF TAN BETWEEN SI AND CU[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,1996(4):265-272. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%