用电化学循环伏安测试技术研究了铜在甲胺-铁氰化钾抛光液中钝化成膜的机理.通过大幅度改变电位扫描速率,分析了氧化峰电流(IApa)、氧化峰电位(EApa)及阳阴峰电流的比值(IApa/IApc)与相应电位扫描速率的关系.结果表明,氧化峰电流和氧化峰电位均与电位扫描速率的平方根成线性关系,说明成膜复盖度θ与电位扫描速率无关,成膜过程符合Muller模型.成膜过程中,电极反应存在后置化学转化,铜在去极化剂作用下发生失去一个电子的阳极溶解反应,然后再进行化学转化反应生成Cu4[Fe(CN)6]钝化膜.在CMP过程中,具有这种钝化膜的铜的腐蚀电流密度及抛光速率随抛光转速的增加而增大.
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