以Ar+SiH4作为反应气体, 采用电子回旋共振等离子体增强化学气相沉积(ECR--PECVD)方法制备微晶硅薄膜, 研究了基片温度对薄膜微观结构、吸收系数、光学禁带宽度的影响。结果表明, 随着基片温度的升高, 薄膜的微观组织逐渐由非晶转化为微晶, 薄膜的粗糙度单调增大, 而H含量则单调减小。薄膜的光学吸收系数随基片温度的升高而增大, 禁带宽度由1.89 eV降低到1.75 eV。
Microcrystalline silicon films were deposited using Ar diluted SiH4 gaseous mixture by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD). The effects of the substrate temperature on microstrcture and optical properties of microcrystalline silicon films were investigated. The results show that, with the increasing of the substrate temperature, the crystallinity and roughness increased, but the concentration of hydrogen decreased monotonously. Furthermore, the absorption coefficient of the films increased monotonously, and the optical bandgap changed from 1.89 eV to 1.75 eV with the substrate temperature ranging from 200 # to 500 #.
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