以共沉淀法制备的纳米(75mol％Bi2O3+25mol％Y2O3)混合粉体作为原料,通过无 压反应烧结工艺制备了纳米Bi2O3-Y2O3快离子导体.对烧结过程中高导电相(纳米δ-Bi2O3) 的形成规律研究表明:固溶反应发生在烧结过程的初期,在烧结过程中晶粒生长规律符合 (D-D0)2=K·t抛物线方程.用模式识别技术对δ-Bi2O3相生成的工艺条件进行优化的工艺 参数优化区为:Y>-1.846X+3.433(X=0.0059T+0.0101t,Y=-0.0059T+0.0101t,式中, T为烧结温度,t为烧结时间).在T=600℃,t=2h无压反应烧结条件下,纳米晶Bi2O3-Y2O3 快离子导体材料的相对密度可达96％以上,并且微观结构致密均匀,很少有残留气孔和裂纹, 平均晶粒尺寸在100nm以下.
With nanometer (75mol%Bi2O3+25mol%Y2O3) powder prepared by coprecipitation as raw material, the nanocrystalline Bi2O3-Y2O3 fast ionic conductor was fabricated through
pressureless reactive sintering technique. The study results on formation law of highly conductive phase (nano δ -Bi2O3) in the sintering process show that the solid solution reaction
happens at the early stage of sintering process, and the grain growth accords with the rule of para-curve equation (D-D0)2=K·t. The optimizing domain of sintering technique parameters forming
δ -Bi2O3 was optimized by the pattern recognition technique, that is Y>-1.846X+3.433 (X=0.0059T+0.0101t, Y=-0.0059T+0.0101t, where T is sintering temperature, t is sintering time).
At the pressureless reactive sintering conditions of T=600℃, t=2h, the nanocrystalline Bi2O3-Y2O3 fast ionic conductor can reach to a relative density of higher than 96%,
and its microstructure is compact and homogeneous with few remaining pores or cracks, its average grain size is less than 100nm.
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