在高纯氮气气氛中采用有机前驱体热解法合成了氮化硅纳米线,对氮化硅纳米线所进行的详细的微观表征表明它们具有良好的单晶特性,其生长沿着α-Si_3N_4的[1010]方向并受VS机制所控制.在室温下用325 nm激光对样品激发,观察到样品有很宽的强光致发光带,在实验中用肉眼即能观察到从样品所发出的强光.考虑到通过稀土掺杂(如引入Nd、Eu、Er和Yb)等手段能够降低氮化硅纳米结构的能带从而进一步调控其光学性能,可以相信氮化硅纳米线在防伪发光材料领域将有着广阔的开发潜力.
The present work synthesized Si_3N_4 nanowires by polymeric precursor pyrolysis in pure N_2 atmosphere. Micro-characterization reveals as-synthesized Si_3N_4 nanowires are single crystalline and grow along [10-10]. The vapor-solid (VS) process should be the dominant growth mechanism. Photoluminescence (PL) measurement was performed at room temperature using a HeCd laser with an excitation wavelength of 325 nm. Si_3N_4 nanowires exhibit intensive and broad emission. This intensive light emission can be observed even with the naked eye. considering that the mid-gap levels of Si_3N_4 can be easily tailored by rare-earth doping (such as Nd, Eu, Er and Yb), Si_3N_4 nanowires could have great potential for the research on anti-counterfeit luminescent materials.
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