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采用Sol-gel法在Pt/Ti/SiO2/Si和Al2O3基片上制备厚度为2~14μm的Ba0.6Sr0.4TiO3(BST)铁电厚膜材料.经高能球磨细化和表面改性后的BST陶瓷纳米粉体分散到BST溶胶中,通过甩胶法,形成0-3型BST厚膜材料.XRD图谱显示,BST呈现纯钙钛矿相结构;SEM照片显示,BST厚膜均匀致密、无裂纹;介电性能测试结果表明,当测试频率为1kHz,温度为25℃时,介电常数为620,介电损耗为0.6.

参考文献

[1] De Flaviis F;Ho J G;Alexopoulso N G et al.Ferroelectric materials for microwave and millimeter wave applications[J].Proceedings of SPIE,2001,4236:179.
[2] Varadan V K;Vinoy K J;Hargsoon Y.Application of MEMS in microelectromechanical systems applications[J].THIN SOLID FILMS,2000:712.
[3] Tombak A;Maria J P;Ayguavives F et al.Tunable barium strontium titanate thin film capacitors for Rf and microwave application[J].IEEE Microwave and Wireless Components Letters,2002,12:3.
[4] Romanofsky R;Bernhard J T;Keuls F W et al.K-band reflection-type phase shifter at S-band using BST coated substrate[J].IEEE Transactions on Microwave theory and Techniques,2000,48:2504.
[5] Xu BM.;Bernstein JJ.;Cross LE. .Ferroelectric and antiferroelectric films for microelectromechanical systems applications[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2000(0):712-718.
[6] Wang ZH.;Zhu WG.;Zhao CL.;Tan OK. .Dense PZT thick films derived from sol-gel based nanocomposite process[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2003(1/3):56-62.
[7] 夏冬林,刘梅冬,曾亦可,李军,黄焱球,刘少波.新型SOl-Gel技术PZT铁电厚膜的制备及电学性能研究[J].无机材料学报,2001(06):1156-1160.
[8] Zhou Q F;Hong E;Wolf R.[J].Materials Research Society Proceeding,2001:655.
[9] Barrow D A;Sayer M et al.Characterization of thick lead zirconate titanate films fabricated using a new sol gel based process[J].Journal of Applied Physics,1997,81(02):876.
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