研究了L-精氨酸掺杂下硫脲硫酸锌(ZTS)溶液中的成核过程,测量了在不同掺杂浓度下ZTS溶液的亚稳区和诱导期.结果表明:随掺杂浓度的增加,溶液的亚稳区变宽,诱导期增大;根据经典成核理论计算了晶体的成核热、动力学参数,分析了溶液稳定性与掺杂浓度的关系,即随着L-精氨酸掺杂浓度的增加,溶液的稳定性得到明显提高.利用化学腐蚀法对ZTS晶体(100)面进行了腐蚀,并用光学显微镜对腐蚀面进行观察,得到了清晰的位错蚀坑.当L-精氨酸掺杂浓度为1.5mol%时,ZTS晶体(100)面位错蚀坑密度最小,适合高光学质量晶体的生长.
参考文献
[1] | Ramabadran U B;Zelmon D E;Kennedy G C .Electro-optic,Piezoelectric and Dielectricpropefties of Zinc Tris-thiourea Sulfate[J].Applied Physics Letters,1992,60(21):2589-2591. |
[2] | Marcy H O;Warren L F;Weeb M S .Second-harmonic Generation in Zinc Tris (thiourea) Sulfate[J].Applied Optics,1992,31:5051-5060. |
[3] | Krishnan C;Sclvarajan P;Freeda T H .Growth and Studies of Pure and Potassium Iodide-doped Zinc Tris-thiourea Sulphate (ZTS) Single Crystals[J].Materials Letters,2008,62:4414-4416. |
[4] | Ushasree PM.;Jayavel R.;Ramasamy P.;Muralidharan R. .Metastable zonewidth, induction period and interfacial energy of zinc tris(thiourea) sulfate[J].Journal of Crystal Growth,2000(4):741-745. |
[5] | Ushasree P M;Jayavel R;Ramasamy P .Influence of pH on the Characteristics of Zinc Tris (thiourea) Sulfate (ZTS) Single Crystals[J].Materials Chemistry and Physics,1999,61:270-274. |
[6] | Meenakshisundaram S;Parthiban S;Sarathi N;Kalavathy R;Bhagavannarayana G .Effect of organic dopants on ZTS single crystals[J].Journal of Crystal Growth,2006(2):376-381. |
[7] | Sweta Moitra;Tanusree Kar .Growth and characterization of nonlinear optical crystal zinc tris (thiourea) sulphate in presence of L-arginine[J].Optical materials,2007(3):508-512. |
[8] | 程旻,李明伟,付东,石航,喻江涛.不同pH值下磷酸二氢钾晶体的生长实验[J].重庆大学学报(自然科学版),2008(07):809-814. |
[9] | Venkataramanan V.;Wadhawan VK.;Sherwood JN.;Bhat HL.;Dhanaraj G. .CRYSTAL GROWTH AND DEFECTS CHARACTERIZATION OF ZINC TRIS (THIOUREA) SULFATE - A NOVEL METALORGANIC NONLINEAR OPTICAL CRYSTAL[J].Journal of Crystal Growth,1995(1/2):92-97. |
[10] | Nyvlt J;Rychly R;Gottfried J et al.Metastable Zone-width of Some Aqueous Aolutions[J].Journal of Crystal Growth,1970,6:151. |
[11] | Zaitseva NP.;Bogatyreva SV.;Rashkovich LN. .STABILITY OF KH2PO4 AND K(H,D)(2)PO4 SOLUTIONS AT FAST CRYSTAL GROWTH RATES[J].Journal of Crystal Growth,1995(3):276-282. |
[12] | 姚连增.晶体生长基础[M].合肥:中国科学技术大学出版社,1995:263-283. |
[13] | 闵乃本.晶体生长的物理基础[M].上海:上海科学技术出版社,1982:345. |
[14] | Klapper H. .Generation and propagation of dislocations during crystal growth[J].Materials Chemistry and Physics,2000(2/3):101-109. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%