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利用透射电子显微镜研究了气—液—固(VLS)法生长的β—SiC晶须中的孪晶构型。在竹节状的SiC晶须中,β—SiC节与含高密度堆垛层错(或一维无序)的节之间孪生相连,其李晶界为{111}_β;同时还观察到有的β-SiC节被{111}_β孪晶界分为两节。此外,在晶须的头部及分叉处还观察到了孪晶界平行晶须轴向的孪晶结构。利用选区电子衍射和像衍衬分析发现,这种双晶SiC晶须的孪晶面平行于基体的{001}_M。

The twin configuration of β-SiC whiskers prepared by the vapour-liquid-solid process was investigated under TEM. In the whiskets with "bamboo jo-int" morphology, the β-SiC part is jointed with the one-dimensional disorderedpart by the {111}_β twin boundary, microtwins of several atomic layer thick werepresent in β-SiC region. It was noted that the {111}_β twin boundary divides someβ-SiC regions into two parts. The second-order twin joint was also observed at thewhisker tip and the branching position of the bicrystalline whisker. Electron diffra-ction analysis demonstrated that the twin boundary in the bicrystalline whisker isparallel to the matrix {001)_M plane.

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