在N2、Ar气氛中,采用反应直流磁控溅射法在Al2O3基陶瓷及玻璃基底上制备了Ta-N薄膜,并对各样品的形貌结构、化学组分及电学特性进行了比较分析研究.结果表明,沉积于Al2O3陶瓷及玻璃基底的Ta-N薄膜分别呈团簇状生长与层状紧密堆积生长；Al2O3陶瓷基底沉积的Ta-N为单相薄膜,而玻璃基底上的Ta-N薄膜,随N2、Ar流量比增加,呈单相向多相共存转变；薄膜表面形貌和微结构与基底材料的原始形貌和微结构紧密相关,这说明基底材料对薄膜的形成有重要的影响；N2、Ar流量比相同时,玻璃基底上沉积的Ta-N薄膜电性能优于Al2O3基陶瓷基底上沉积的Ta-N薄膜.
参考文献
| [1] | Seema Vinayak;H.P. Vyas;V.D. Vankar .Microstructure and electrical characteristics of Ni-Cr thin films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2007(18):7109-7116. |
| [2] | Klein E I;Hershkovich M;Goldberg A I .The mechanism of oxidation of thin Ni-Cr films[J].Microelectronics Journal,1988,19(06):17. |
| [3] | Waits K R .Silicon-chromium thin film resistor reliability[J].Thin Solid Films,1973,16(02):237. |
| [4] | Kang, SM;Yoon, SG;Suh, SJ;Yoon, DH .Control of electrical resistivity of TaN thin films by reactive sputtering for embedded passive resistors[J].Thin Solid Films,2008(11):3568-3571. |
| [5] | Riekkinen T;Molarius J;Laurila T et al.Reactive sputter deposition and properties of Tax N thin films[J].Microelectronic Engineering,2002,64(1-4):289. |
| [6] | K. Radhakrishnan ； N. Geok ing .Reactive sputter deposition and characterization of tantalum nitride thin films[J].Materials Science & Engineering, A. Structural Materials: Properties, Misrostructure and Processing,1999(3):224-227. |
| [7] | Cuong ND;Kim DJ;Kang BD;Kim CS;Yu KM;Yoon SG .Characterization of tantalum nitride thin films deposited on SiO2/Si substrates using dc magnetron sputtering for thin film resistors[J].Journal of the Electrochemical Society,2006(2):G164-G167. |
| [8] | 王超杰,蒋洪川,张万里,向阳,司旭.氮流量对TaN薄膜微结构及性能的影响[J].功能材料与器件学报,2010(01):85-88. |
| [9] | Chang C C;Jeng S J;Chen S J .Microstructural and electrical characteristics of reactively sputtered Ta-N thin films[J].Thin Solid Films,2002,413(1-2):46. |
| [10] | Chen S G;Chen T S;Huang C S et al.Growth mechanism of sputter deposited Ta and Ta-N thin films induced by an underlying titanium layer and varying nitrogen flow rates[J].Applied Surface Science,2001,169-170:353. |
| [11] | Tsai MH.;Tsai CE.;Chuang SH.;Chiu HT.;Sun SC. .COMPARISON OF THE DIFFUSION BARRIER PROPERTIES OF CHEMICAL-VAPOR-DEPOSITED TAN AND SPUTTERED TAN BETWEEN CU AND SI[J].Journal of Applied Physics,1996(9):6932-6938. |
| [12] | Westwood D W;Waterhouse N;Wilcox S P.Tantalum thin films[M].London,UK:Academic Press,1975:138. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%