6H-SiC衬底上多晶Si薄膜热壁CVD间隔生长与结构表征

人工晶体学报, 2014, 43(8): 1965-1969.

6H-SiC衬底上多晶Si薄膜热壁CVD间隔生长与结构表征

高战军 ^1, , 陈治明 ^2, , 李连碧 ^3, , 赵萌 ^4, , 黄磊 ^5,

1.西安理工大学,西安710048

2.西安理工大学,西安710048

3.西安理工大学,西安710048

4.西安理工大学,西安710048

5.西安理工大学,西安710048

基金项目: 国家自然科学基金(51177134)

关键词：热壁LPCVD , 多晶Si薄膜 , 择优取向 , 表面粗糙度

Growth and Structural Characterization of Polycrystalline Silicon Film Pulsed on 6H-SiC Substrate by HWCVD

Keywords： hot-wall LPCVD , polycrystalline Si thin film , preferred orientation , surface roughness

在热壁LPCVD系统中利用间隔生长法在6H-SiC衬底上淀积Si薄膜,采用XRD、SEM、激光共聚焦显微镜和拉曼光谱对Si薄膜的表面形貌和结构进行表征.结果表明:相比于连续生长法,用间隔法制备Si薄膜的速率有所降低,但表面粗糙度有所减小,同时晶粒尺寸也增大.XRD测试结果表明:间隔法可以控制薄膜生长的择优取向.Raman光谱测试结果表明:采用间隔法且断源时间控制在30 s时,生长温度900℃,H2∶ SiH4 =400∶20 sccm时生长Si薄膜的Raman半峰宽最小.

参考文献

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材料期刊网

6H-SiC衬底上多晶Si薄膜热壁CVD间隔生长与结构表征

Growth and Structural Characterization of Polycrystalline Silicon Film Pulsed on 6H-SiC Substrate by HWCVD

参考文献