采用扫描电镜、电化学阻抗方法,研究了镁合金AZ91D微弧氧化过程中不同电压下获得氧化膜的性能.结果表明,随着氧化电压的升高,可以获得三种不同性能的氧化膜:钝化膜、微火花氧化膜和弧光氧化膜.钝化膜很薄,厚度不足1μm,膜层的阻抗随着氧化电压升高略有增加,仍属于钝化膜性质;微火花放电后期得到的膜层较厚,厚度可达30 μm,表面均匀、结构致密,具有最高的阻抗,可以达到8×107Ω;弧光放电阶段氧化膜最厚,但结构疏松、易碎,阻抗逐渐降低至1×107Ω.结果还指出,硅酸盐体系中微火花放电阶段后期形成的膜层具有最佳的性能;而且膜层的阻抗主要由氧化膜的有效厚度决定,与总厚度关系不大.
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