利用超高真空电子束蒸发法制备了可替代SiO2作为栅介质的HfAlO膜.薄膜的化学组成为(HfO2)(Al2O3)2,900℃退火处理后仍然呈现非晶状态,而且表面平滑.介电常数为12.7,等效氧化物厚度2 nm,固定电荷密度4×1012cm-2,2 C栅偏压下漏电流为0.04 m A/cm2.后退火处理能有效降低固定电荷密度和泄漏电流密度,但会造成界面SiO2的生长.
Hf-aluminate films, a potential replacement for SiO2 as gate dielectrics, were deposited on Si substrate by ultra-vacuum electron beam evaporation (EB-PVD) method. The film with a chemical composition of (HfO2)(Al2O3)2,remained amorphous even after post annealing treatment at 900℃, presenting good electrical performances including a dielectric constant of 12.7, an equivalent oxide thickness of 2 nm, a fixed charge density of 4× 1012 cm-2, and a leakage current density of 0.04 mA/cm2 at the gate bias of 2V. Post annealing treatment could reduce the leakage current and the fixed charge density effectively, but made the film surface rough and increased equivalent oxide thickness.
参考文献
| [1] | Wilk GD.;Anthony JM.;Wallace RM. .High-kappa gate dielectrics: Current status and materials properties considerations [Review][J].Journal of Applied Physics,2001(10):5243-5275. |
| [2] | Yu H Y et al.[J].Thin Solid Films,2004,110:462-463. |
| [3] | Cho M H et al.[J].Applied Physics Letters,2002,81(06):1071. |
| [4] | Lee P F et al.[J].Journal of Applied Physics,2003,93(06):3665. |
| [5] | Mikhelashvili V;Brener R;Kreinin O;Meyler B;Shneider J;Eisenstein G .Characteristics of metal-insulator-semiconductor capacitors based on high-k HfAlO dielectric films obtained by low-temperature electron-beam gun evaporation[J].Applied physics letters,2004(24):5950-5952. |
| [6] | Renault O et al.[J].Applied Physics Letters,2002,81(19):3627. |
| [7] | Moonju Cho et al.[J].Journal of Applied Physics,2003,94(04):2563. |
| [8] | Yu HY.;Wu N.;Li MF.;Zhu CX.;Cho BJ.;Kwong DL.;Tung CH.;Pan JS. Chai JW.;Wang WD.;Chi DZ.;Ang CH.;Zheng JZ.;Ramanathan S. .Thermal stability of (HfO2)(x)(Al2O3)(1-x) on Si[J].Applied physics letters,2002(19):3618-3620. |
| [9] | Cho M H et al.[J].Applied Physics Letters,2002,81(03):472. |
| [10] | Yan Z J et al.[J].Applied Physics Letters,2004,85(01):85. |
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