保持总的工作气压不变,在不同氩氧比条件下,采用射频磁控溅射法在铝电极层上制备了ZnO薄膜.用X射线衍射(XRD)、原子力显微镜(AFM)和压电响应力显微镜(PFM)分析了ZnO薄膜的择优取向、表面形貌和压电响应,并通过垂直PFM(VPFM)和水平PFM(LPFM)相位图研究了ZnO晶粒的极化特性.结果表明,氩氧比对ZnO薄膜的晶体结构和压电特性有显著影响,其中在氩氧比1∶1的条件下制备的ZnO薄膜具有最大的VPFM振幅和最佳的极化取向一致性.
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