OBSERVATION ON DEFECTS IN POLYCRYSTALLINE SILICON THIN FILMS

金属学报(英文版), 2005, 18(3): 295-299.

^1, , ^2, , ^3, , ^4, , ^5, , ^6,

1.College of Mechanical Engineering, South China University of Technology, Guangzhou 510640,China

2.The School of Physics and Engineering, Zhongshan University, Guangzhou 510275,China

3.Guangzhou Institute of Energy Conversion, The Chinese Academy of Sciences, Guangzhou 510640,China

4.Guangzhou Institute of Energy Conversion, The Chinese Academy of Sciences, Guangzhou 510640,China

5.College of Mechanical Engineering, South China University of Technology, Guangzhou 510640,China

6.College of Mechanical Engineering, South China University of Technology, Guangzhou 510640,China

基金项目: 中国科学院"百人计划"(99-019-422288) 国家自然科学基金(50376067) 广东省科技攻关项目(A1100501) 国家高技术研究发展计划(863计划)(2001AA513060)

OBSERVATION ON DEFECTS IN POLYCRYSTALLINE SILICON THIN FILMS

Keywords： poly-Si thin film

Polycrystalline silicon thin films were prepared by RTCVD (rapid thermal chemical vapor deposition) method on several substrates such as SSP (silicon sheet from powder) ribbon,poly-Si wafer and mono-Si wafer. Intra-granular defects such as stacking faults, twins and microstructure defects were investigated on thin films by scan electron microscopy (SEM) technique.

参考文献

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OBSERVATION ON DEFECTS IN POLYCRYSTALLINE SILICON THIN FILMS

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