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利用高压固相反应方法成功合成了Ba填充型方钴矿化合物BaxCo4Sb12(0.2≤x≤0.8), 并探讨了Ba填充及合成压强对化合物电学性能的影响. 采用XRD和SEM确定了相组成和晶体形貌, 并在室温下测试了材料的电阻率及Seebeck系数. 实验结果表明:高压可有助于提高Ba在CoSb3中的填充含量; 化合物BaxCo4Sb12的晶粒直径处于微纳米级而且样品中含有大量的微气孔; 在合成压强为4.25GPa时, 样品Ba0.8Co4Sb12获得最高的功率因子13.19μW/(cm·K2).

Polycrystalline skutterudite compounds BaxCo4Sb12 (0.2≤x≤0.8) were successfully synthesized by solid state reaction under high pressure (2-5GPa). The crystallographic figures and microstructure were characterized by X-ray diffraction and electron probe microanalysis separately. Seebeck coefficient and electrical resistivity were measured at room temperature. The results show that high-pressure synthesis method can improve the Ba-filled content effectively. The samples have few micro-pores with fine-grai1ned structure, their grain diameter sizes are in the micro-nanometer range. The maximum power factor value of the sample Ba0.8Co4Sb12 obtained at 4.25GPa is 13.19μW/(cm·K2).

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