欢迎登录材料期刊网

材料期刊网

高级检索

The high strength, radiation hardness and cost-effectiveness make Germanium the substrate of choice for high-efficiency multi-junction solar cells for space applications.Numerical modeling and large-scale simulation are important and indispensable tools in the analysis and development of crystal growth process.In this study, germanium single crystals with low dislocation density were produced by Czochralski method by applying the necking technique.Chemical etching pits method was used to measure the dislocation density, and a professional modeling software CrysVUn was used to obtain the thermal-stress distribution.The results show that the thermal-stress of the sample with diameter of 15 mm is nearly equal to that of other samples, so the thermal-stress does not influence the dislocation multiplication.Based on the result, the dislocation density must be strangely increased caused by gravity.

参考文献

[1] D'Hondt M.;Depreter B.;Sys C.;Moerman I.;Demeester P. Mijlemans P.;Yu ZQ. .High quality InGaAs/AlGaAs lasers grown on Ge substrates[J].Journal of Crystal Growth,1998(1/4):655-659.
[2] Hurle D T J;Cockayne B.Handbook of Crystal Growth[M].Amsterdam:North-holland,1994
[3] Hurle D T J.[M].Crystal Pulling from the Melt Springer,Berlin,1993
[4] Rehse U;Miller W;Frank Ch et al.A numerical investigation of the effects of iso-and counter-rotation on the shape of the VCz growth interface[J].Journal of Crystal Growth,2001,230:143.
[5] Geng X.;Guo ZY.;Wu XB. .NUMERICAL SIMULATION OF COMBINED FLOW IN CZOCHRALSKI CRYSTAL GROWTH[J].Journal of Crystal Growth,1997(1/2):309-319.
[6] Kurz M.;Muller G.;Pusztai A. .Development of a new powerful computer code CrysVUN++ especially designed for fast simulation of bulk crystal growth processes[J].Journal of Crystal Growth,1999(Pt.1):101-106.
[7] Bogaert N;Van den;Dupret F .Dynamic global simulation of the Czochralski process I.Principles of the method[J].Journal of Crystal Growth,1997,171:65.
[8] Brown R A .[J].AICHE Journal,1988,34:881.
[9] Dupret F;Bogaert N Van den.[M].Amsterdam:North-holland,1994
[10] Shiraishi Y.;Matsubara J.;Iida T.;Takase N.;Machida N. Kuramoto M.;Yamagishi H.;Takano K. .Growth of silicon crystal with a diameter of 400 mm and weight of 400 kg[J].Journal of Crystal Growth,2001(1):17-21.
[11] Ben Depuydt.8″ Ge Substrates for Micro-& Opto-Electronic Applications[M].
[12] Lu H;Gao K W;Chu W Y .Etch-stop Effect of Dislocations in Photoelectrochemical Etching Process of N-type GaN[J].Corrosion Science,1998,40:1663.
[13] Rice James R .Dislocation nucleation from a crack tip:An analysis based on the Peierls concept[J].Mechanics and Physics of Solids,1992,40:239.
[14] Institute of Semiconductors CAS.Testing and Analyzing for Semiconductors[M].北京:科学出版社,1984:2.
[15] 谢书银,袁鹏,万关良,李励本,张锦心.硅片塑性形变与位错[J].稀有金属,1998(03):208-211.
[16] Gu biao;Wan Farong;Chu Wuyang .In Situ TEM observation of dislocation emission,motion induced by anodic dissolution and initiation of SCC in brass thin foil[J].Tnonferr Metal Soc,1995,31:A156.
[17] 王学锋,翟立君,周旗钢,王敬,戴小林,吴志强.大直径直拉硅单晶炉热场的数值模拟[J].稀有金属,2004(05):890-893.
[18] Shahryar Motakef .Fundamental considerations in creep-based determination of dislocation density in semiconductors grown from the melt[J].Journal of Crystal Growth,1997,114:47.
[19] Chen R T;Holmes D E .Dislocation studies in 3-inch diameter liquid encapsulated Czochralski GaAs[J].Journal of Crystal Growth,1983,61:111.
[20] Grabmaier B C;Grabmaier J G .Dislocation-free GaAs by the liquid encapsulation technique[J].Journal of Crystal Growth,1972,13-14:635.
[21] Jacob G;Farges J P;Schémali C et al.Dislocations in GaAs[J].Journal of Crystal Growth,1982,57:245.
[22] Peter Sveshtarov;Marin Gospodinov .The melt level technique of automatic Czochralski crystal growth; basic theory and comparison with the weighing method[J].Journal of Crystal Growth,1992,118:439.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%