采用射频反应磁控溅射金属钇耙的方法,在硅衬底成功制备了高介电Y2O3薄膜.并深入研究了Y2O3薄膜的微结构和Y2O3/Si 体系的界面结构在高温退火过程中的变化规律.研究结果表明:在400～500 ℃之间,Y2O3 薄膜有一个从单斜相向立方相的物相结构转变过程.在高温退火过程中,Y2O3/Si有界面层SiO2生成,并且随着退火温度增加,界面层SiO2 的厚度也在逐渐增加.
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