为了研究SiN盖帽层在Si中引入应变的机理与控制,利用高分辨X射线衍射(HRXRD)技术分析了si中应变的各向异性以及与盖帽层厚度的关系.研究发现,盖帽层厚度低于300nm时,应变量与厚度呈近线性关系,随后增加趋缓,最终达到一饱和值;同时,应变在不同晶向表现出明显的各向异性,表层应变Si与未应变Si衬底在(004)晶面上的衍射峰重叠在一起,而(111)晶面的2个衍射峰可明显地被分离,且倾角对Si衬底衍射峰半高宽具有明显的展宽.
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