利用磁控溅射法制备了新型AgInSbTe相变薄膜, 热处理前后的X射线衍射(XRD)表明了薄膜在热作用下从非晶态转变到晶态. 通过非晶态薄膜粉末的示差扫描量热(DSC)实验测定了不同升
温速率条件下的结晶峰温度, 计算了粉末的摩尔结晶活化能、原子激活能和频率因子. 从结晶活化能E可以判断出新型AgInSbTe相变薄膜具有较高的结晶速度, 可以用于高速可擦重
写相变光盘.
A new type AgInSbTe phase change film was prepared by direct magnetron sputtering. X-ray diffraction (XRD) spectra of the film in as-deposited and heat-treated states show the film changed from amorphous
to crystalline states due to heat-treatment. By using differential scanning calorimetry (DSC) data of the amorphous film materials, measuring the peak temperature of crystallization at different heating
rates, the mol activation energies for crystallization and frequency factors were calculated. By judging from the mol activation energies, the new type AgInSbTe phase change film has a high value of activation
energies for crystallization and will be suitable to the high-speed phase change disks for the direct overwrite.
参考文献
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