在微弧氧化法制备TiO2光催化薄膜的过程中, 采用向电解液中添加氧化物的方法对薄膜进行改性. 实验结果表明, 过渡金属、重金属及稀土元素掺杂可在不同程度上影响薄膜的光催化性能, 其中, V, Ag, Ce元素掺杂可使光催化120 min的降解率提高10%以上. 采用半导体掺杂也能很好地提高TiO2薄膜的光催化性能, 其中以SnO2效果最好. 实验表明, V2O5添加量在0.5 mmol/L或SnO2添加量在1.0 mmol/L时, 生成的TiO2薄膜光催化效果最好. XRD及SEM分析表明, 掺杂不改变TiO2晶型, 改性后的TiO2光催化薄膜增厚, 微弧放电形成的孔道变小, 表面积增加.
Titanium dioxide photocatalytic thin films were prepared using method of microarc oxidation. Aimed to improve the photocatalytic activity of the titanium dioxide photocatalytic thin films, the components of the electrolytes were changed in process of the Microarc Oxidation by adding the oxide. The results show that over 10 percent of photocatalytic degradation ratio is improved with using the doped components of V、Ag、Ce, better than that of transition elements, heavy metals and rare earths. The semiconductor doping may obviously improve the photocatalytic activity. As far as the materials of V2O5 or SnO2 are concerned, effect of the concentration on the photocatalytic activity was also investigated. The results show that the photocatalytic degradation ratio was significantly improved as the concentration of V2O5 0.5mmol or SnO2 1.0mmol. The properties and structures were investigated by means of the XRD and SEM. The thickness and surface area of the microarc oxidation coating increase, and microarc channels diameter and particle size of microarc oxidation coating decrease for the Microarc Oxidation process with the treated electrolytes. But crystal lattice structure of titanium dioxide yet remains anatase.
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