采用RF-PECVD法在低温低功率密度下制备了p型nc-Si∶H薄膜,并系统地研究了硼掺杂对薄膜微结构及光电性能的影响.结果表明:由于“硼掺杂效应”,随着掺硼比的增大,nc-Si∶H薄膜的晶化率逐渐降低,晶粒尺寸减小,薄膜的择优取向由[111]变为[220];光学带隙逐渐减小,电导率则先升后降;本实验中薄膜的最优掺杂比为0.3％.以优化后的p型nc-Si∶H薄膜做窗口层,SHJ太阳电池的性能得到明显改善,获得了效率为14.1％的电池.
参考文献
| [1] | E. Fathi;Y. Vygranenko;M. Vieira;A. Sazonov .Boron-doped nanocrystalline silicon thin films for solar cells[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2011(21):8901-8905. |
| [2] | V.S. Waman;M.M. Kamble;S.S. Ghosh.Evolution of microstructure and opto-electrical properties in boron doped nc-Si:H films deposited by HW-CVD method[J].Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics,2014:523-528. |
| [3] | Saleh R;Nickel NH .The influence of boron concentrations on structural properties in disorder silicon films[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2007(2):580-585. |
| [4] | Chao Song;Xiang Wang;Rui Huang;Jie Song;Yanqing Guo .Effects of doping concentration on the microstructural and optoelectrical properties of boron doped amorphous and nanocrystalline silicon films[J].Materials Chemistry and Physics,2013(1):292-296. |
| [5] | H. Chen;M.H. Gullanar;W.Z. Shen .Effects of high hydrogen dilution on the optical and electrical properties in B-doped nc-Si:H thin films[J].Journal of Crystal Growth,2004(1/2):91-101. |
| [6] | Wei WS;Wang TM;Zhang CX;Li GH;Han HX;Ding K .Preferred growth of nanocrystalline silicon in boron-doped nc-Si : H Films[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2004(1):69-75. |
| [7] | 于威,卢海江,路万兵,孟令海,王新占,韩理,傅广生.氢稀释对纳米晶硅薄膜微结构的影响[J].功能材料,2011(03):524-527. |
| [8] | Chandan Das;Arup Dasgupta;S. C. Saha;Swati Ray .Effects of substrate temperature on structural properties of undoped silicon thin films[J].Journal of Applied Physics,2002(11):9401-9407. |
| [9] | Bakr, N.A.;Funde, A.M.;Waman, V.S.;Kamble, M.M.;Hawaldar, R.R.;Amalnerkar, D.P.;Sathe, V.G.;Gosavi, S.W.;Jadkar, S.R. .Influence of deposition pressure on structural, optical and electrical properties of nc-Si:H films deposited by HW-CVD[J].The journal of physics and chemistry of solids,2011(6):685-691. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%