以醇酸镓Ga(OC2H5)3作前驱体,利用溶胶-凝胶法和高温氨化法相结合,成功的合成了GaN粉末.用X射线衍射(XRD)、扫描电子显微镜(SEM)、选择区电子衍射(SAED)、光致发光谱(PL)对粉末的结构、形貌和发光特性进行了表征.结果表明:在950℃时,可以得到纯度较高的GaN粉末且采用该工艺合成的GaN粉末粒度较均匀,生成的GaN多晶絮状颗粒为六方纤锌矿结构,室温下光致发光谱的测试结果发现了较强的402 nm处的近带边发光峰和460 nm处的蓝色发光峰.
参考文献
| [1] | Jae-Ryoung Kim;Hwangyou Oh;Hye Mi So .Schottky diodes based on a single GaN nanowires[J].Nanotechnology,2002(5):701-704. |
| [2] | Zhang J.;Wang XF.;Wang YW.;Zhang LD.;Peng XS. .Micro-Raman investigation of GaN nanowires prepared by direct reaction Ga with NH3[J].Chemical Physics Letters,2001(5-6):372-376. |
| [3] | Shi WS.;Wang N.;Lee CS.;Lee ST.;Zheng YF. .Microstructures of gallium nitride nanowires synthesized by oxide-assisted method[J].Chemical Physics Letters,2001(5-6):377-380. |
| [4] | Lee S H .[J].Physica Status Solidi,2001,228(02):371. |
| [5] | Millet P .[J].Applied Physics Letters,1993,63:2505. |
| [6] | Li H D .[J].Applied Physics Letters,1996,69:1285. |
| [7] | Gao Ruiping;Li Xiaoguang.The Theory and Technology in Physics and Chemistry of Advanced Ceramics[M].北京:科学出版社,2001 |
| [8] | Li J Y.[J].Journal of Materials Science,2001:757. |
| [9] | 张昊翔,叶志镇,卢焕明,赵炳辉.硅基GaN外延层的光致发光谱[J].半导体光电,1999(02):120-122. |
| [10] | Li J Y;Chen X L;Qiao Z Y et al.[J].Journal of Materials Science Letters,2001,20(08):757. |
| [11] | Ogino T;Aoki M .[J].Japanese Journal of Applied Physics,1980,19:2395. |
| [12] | Hofmann D M .[J].Physical Review,1995,B52:16702. |
| [13] | Tu LW.;Chen SJ.;Lo I.;Stocker D.;Schubert EF.;Lee YC. .Yellow luminescence depth profiling on GaN epifilms using reactive ion etching[J].Applied physics letters,1998(19):2802-2804. |
| [14] | Monemar B .[J].Physical Review,1974,B10:676. |
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