沉积温度对磁控溅射法制备La0.5 Sr0.5 CoO3薄膜微结构和导电性能的影响

机械工程材料, 2009, 33(4): 18-21.

沉积温度对磁控溅射法制备La0.5 Sr0.5 CoO3薄膜微结构和导电性能的影响

付跃举 ^1, , 刘保亭 ^2, , 郭颖楠 ^3, , 傅广生 ^4,

1.河北大学物理科学与技术学院,铁性材料与器件研究所,河北保定,071002

2.河北大学物理科学与技术学院,铁性材料与器件研究所,河北保定,071002

3.河北大学物理科学与技术学院,铁性材料与器件研究所,河北保定,071002

4.河北大学物理科学与技术学院,铁性材料与器件研究所,河北保定,071002

基金项目: 教育部资助项目(207013) 国家自然科学基金(50572021;60876055) 河北省自然科学基金(E2008000620) 国家重点基础研究发展规划(973计划)(2007CB616910)

关键词： La0.5Sr0.5CoO3薄膜 , 射频磁控溅射 , 外延生长

Effect of Deposition Temperatures on Microstructure and Conduction Properties of La0.5Sr0.5CoO3 Films Prepared by Magnetron Sputtering

采用射频磁控溅射法在(001)SrTiO3基片上制备了La0.5 Sr0.5 CoO3薄膜,研究了沉积温度对La0.5Sr0.5CoO3薄膜微结构和导电性能的影响.结果表明:沉积温度低于400℃时,薄膜以非晶状态存在,未发生外延生长,沉积温度为550℃和650℃时,薄膜在基片上实现了外延生长;随着沉积温度的升高薄膜表面粗糙度呈现规律性的变化;薄膜的电阻率随沉积温度的升高单调下降,650℃沉积薄膜的电阻率最小为1.63μQΩ·cm.

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沉积温度对磁控溅射法制备La0.5 Sr0.5 CoO3薄膜微结构和导电性能的影响

Effect of Deposition Temperatures on Microstructure and Conduction Properties of La0.5Sr0.5CoO3 Films Prepared by Magnetron Sputtering

参考文献