设计了一种外置式电感耦合等离子增强化学气相沉积装置,并利用该装置在n型硅片上低温沉积了SiO2薄膜.通过扫描电子显微镜(SEM)、傅立叶变换红外吸收谱(FTIR)等对生长的薄膜进行表征.SEM测试结果表明,利用该装置沉积的SiO2薄膜表面平整,薄膜均匀性好；根据FTIR图中Si-O峰的横向与纵向光学声子吸收峰的分析发现,沉积功率越大,薄膜越疏松；等离子体区域内不同位置沉积的薄膜均匀,能够用于大规模、大面积的工业生产.此外,为了方便地获知SiO2薄膜的厚度,我们推导出了50W的功率下,薄膜厚度随沉积温度、沉积时间变化的经验公式.
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