运用直流磁控溅射法,采用ZAO陶瓷靶材(Al2O3相对含量2％(质量分数)),结合正交实验表通过改变制备工艺中的基片温度、溅射功率、氧流量百分比等参数,在普通玻璃衬底上制备得到ZnO:Al(ZAO)透明导电薄膜.通过X射线衍射仪(XRD)、扫描电镜(SEM)、荧光分光光度计、四探针测试仪对样品的晶体结构、表面形貌、光电性能进行表征分析.通过正交分析法得出直流磁控溅射法制备ZAO薄膜的最佳组合工艺为基片温度200℃,溅射功率40W,氧流量百分比20％,退火温度400℃,获得薄膜样品最低方块电阻11Ω/(口),薄膜具有最好的发光性能,适合作为薄膜太阳电池的透明导电电极.
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