为研究HgI2晶体结构缺陷与光吸收的关系,测试了晶体的UV和中红外透过光谱.结果表明,波长约为580 nm时,存在着本征吸收限;波长大于580 nm时,随波长增加,晶体对光的吸收减小,透过率达到45%以上;在1000～2500 nm范围内,UV光谱存在四个明显的光吸收带,对应的入射光能量分别为0.79±0.01 eV,0.72 eV,0.57±0.01 eV 和0.53 eV.中红外透过曲线随波长增加而增大,透过率为39%～68%.通过M/HgI2的I～t曲线,采用简单能级模型进一步确认了生长的HgI2晶体存在0.79±0.01 eV和0.72 eV两个陷阱能级.分析认为,HgI2晶体层间的相对移动形成的结构缺陷造成1572.5 nm(0.79±0.01 eV)和1729.2 nm(0.72 eV)处的吸收,晶体缺碘造成2117.5 nm(0.57±0.01 eV)处的吸收和汞空位造成2305.8 nm(0.53 eV)的吸收.在中红外波段,晶体结构缺陷造成了显著的晶格吸收.严格控制原料的化学计量比有利于减少HgI2晶体的结构缺陷,提高晶体的光学性能.
参考文献
| [1] | Schieber M.;Sanguinetti S.;Montalti M.;Braiman M.;Melekhov L.;Nissenbaum J.;Grilli E.;Guzzi M.;Turchetta R.;Dulinski W.;Husson D.;Riester J.L.;Zuck A. .Characterization studies of purified HgI2 precursors[J].Nuclear Instruments and Methods in Physics Research, Section A. Accelerators, Spectrometers, Detectors and Associated Equipment,1999(1):25-29. |
| [2] | Burger A;Nason D .Optical Determinations of the Direct Energy Gap in Mercuric Iodide at Elevated Temperatures[J].Journal of Applied Physics,1992,71(06):2717-2720. |
| [3] | 莫党.固体化学[M].北京:高等教育出版社,1994:45. |
| [4] | 刘建华 .HgI2晶体的生长及其室温探测器的初步研制[D].上海:上海大学,2002. |
| [5] | Isshiki M;Piechotka M;Kaldis E .Vapor Growth Kinetics of α-HgI2 Crystals[J].Journal of Crystal Growth,1990,102(1-2):344-348. |
| [6] | Van D B L;Schnepple W F;Ortale C et al.Vapor Growth of Doped Mercuric Iodide Crystals by the Temperature Oscillation Method[J].Journal of Crystal Growth,1977,42:160-165. |
| [7] | Schlesinger T E;James R B.Semiconductor for Room Temperature Nuclear Detector Application[M].Washington:Academic Press,1995 |
| [8] | Mohammed-Brahim T;Friant A;Mellet J .Characterization of Deep Energy Levels in Mercuric Iodide[J].Physical Status Solidi A Applied Research,1983,79:71-82. |
| [9] | Piechotka M;Kaldis E .Some Sources of Defects in α-HgI2,the Room Temperature γ-ray Detector[J].Monatshefte Fur Chemie,1987,118:137-153. |
| [10] | Micocci G;Rizzo A;Tepore A et al.Isothermal Currents in InSe,GaSe,and GaS Single Crystals[J].Physical Status Solidi A Applied Research,1983,80:263-267. |
| [11] | XU Gang,介万奇,WANG Ling-hang.碘化汞（α-HgI2）晶体生长及其性能表征[J].人工晶体学报,2008(04):795-799. |
| [12] | Zaletin V M;Lyakh N V;Ragozina N V .Stability of Growth Conditions and α-HgI2 Crystal Habit During Growing by Temperature Oscillation Method[J].Crystal Research and Technology,1985,20:307-312. |
| [13] | 刘恩科;朱秉升;罗晋生.半导体物理学[M].北京:国防工业出版社,2005:325. |
| [14] | Sharma S L;Pal T;Acharya H N .A Complete Characterization of Trapping Levels in Red Mercuric Iodide Single Crystals[J].Journal of Applied Physics,1994,75:7884-7893. |
| [15] | Bube R H .Opto-electronic Properties of Mercuric Iodide[J].Physical Review,1957,106:703-717. |
| [16] | Mellet J;Friant A .I(t),I(V) and Surface Effect Studies of Vapor Grown and Solution Grown HgI2 Detectors[J].Nuclear Instruments and Methods in Physics Research A:Accelerators,Spectrometers,Detectors and Associated Equipment,1989,283:199-207. |
| [17] | D. Alexiev;N. Dytlewski;M.I. Reinhard;L. Mo .Characterisation of single-crystal mercuric iodide[J].Nuclear Instruments and Methods in Physics Research, Section A. Accelerators, Spectrometers, Detectors and Associated Equipment,2004(1/3):226-229. |
| [18] | Xu G;Jie W Q;Li G H et al.Study of Trapping Levels in α-HgI2 Crystal by UV Spectrums and Isothermal Current[J].Nuclear Instruments and Methods in Physics Research A:Accelerators,Spectrometers,Detectors and Associated Equipment,2010,613:277-279. |
| [19] | 孙以材.半导体测试技术[M].北京:冶金工业出版社,1984:223-227. |
| [20] | Ponpon J P;Stuck R;Siffert P et al.Properties of Vapour Phase Grown Mercuric Iodide Single Crystal Detectors[J].IEEE Transaction Nuclear Science,1975,22(01):182-191. |
| [21] | Turner D E;Harmon B N .Electronic Structure of Red Mercuric Iodide[J].Physical Review B,1989,40:516-522. |
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