为了了解水平温度梯度作用时Czochralski(CZ)结构浅池内硅熔体热毛细对流的转变滞后特性,利用有限差分法进行了非稳态三维数值模拟,坩埚外壁被加热,半径为50 mm,晶体半径为15 mm,液池深度为3 mm,坩埚外壁与晶体生长界面温差变化范围为6~27 K.模拟结果表明,当逐渐增加温差时,在△T=9 K处,二维轴对称流动转变为三维稳态流动,在△T=20.6 K处,三维稳态流动转变为三维振荡流动;当逐渐减小温差时,在△T=19.5 K处,三维振荡流动才转变为三维稳态流动,因此,二次流动转变存在滞后,滞后温差约为1.1 K.
参考文献
[1] | YAMAGISHI H;Fusegawa Ⅰ .Experimental Observation of a Surface Pattern on a Caochralski Silicon Melt[J].Journal of Japanese Assoc Crystal Growth,1999,17(04):304-311. |
[2] | Yi K W;Kakimoto K;Eguchi M et al.Spoke Patterns on Molten Silicon in Czochralski System[J].Journal of Crystal Growth,1994,144(01):20-28. |
[3] | Nakamura S.;Azami T.;Hibiya T.;Eguchi M. .Thermal waves of a nonaxisymmetric flow in a Czochralski-type silicon melt[J].Journal of Crystal Growth,1999(1/2):55-61. |
[4] | Takeshi Azami;Shin Nakamura;Minoru Eguchi .The role of surface-tension-driven flow in the formation of a surface pattern on a Czochralski silicon melt[J].Journal of Crystal Growth,2001(1/2):99-107. |
[5] | You-Rong Li;Nobuyuki Imaishi;Lan Peng;Shuang-Ying Wu;Taketoshi Hibiya .Thermocapillary flow in a shallow molten silicon pool with Czochralski configuration[J].Journal of Crystal Growth,2004(1/3):88-95. |
[6] | You-Rong Li;Nobuyuki Imaishi;Takeshi Azami;Taketoshi Hibiya .Three-dimensional oscillatory flow in a thin annular pool of silicon melt[J].Journal of Crystal Growth,2004(1/2):28-42. |
[7] | You-Rong Li;Lan Peng;Yasunobu Akiyama;Nobuyuki Imaishi .Three-dimensional numerical simulation of thermocapillary flow of moderate Prandtl number fluid in an annular pool[J].Journal of Crystal Growth,2003(4):374-387. |
[8] | Smith M K;Davis S H .Instabilities of Dynamic Thermocapillary Liquid Layers Part 1 Convective Instabilities[J].Journal of Fluid Mechanics,1983,132:119-144. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%