以氯化铟和无毒红磷为主要原料,十六烷基三甲基溴化铵为表面活性剂,采用溶剂热法低温合成磷化铟纳米线,并用X射线衍射仪(XRD)和场发射扫描电镜(FESEM)对所制备产物的结构和形貌进行了分析表征;能谱仪(EDS)和荧光分光光度计对所制备产物的成分,含量和发光性质进行了表征.结果表明:采用该方法制备出的磷化铟纳米线长短不同,最小直径为20 nm.在合适的条件下,改变反应温度、增加反应时间或改变碱溶液都可生长出高品质的磷化铟纳米线.
参考文献
| [1] | Giessen H;Fluegel B;Mohs G et al.Observation of the Quantum Confined Ground State in InP Quantum Dots at 300K[J].Applied Physics Letters,1996,68(03):304-306. |
| [2] | H. Carrere;X. Marie;L. Lombez;T. Amand .Optical gain of InGaAsN/InP quantum wells for laser applications[J].Applied physics letters,2006(18):181115-1-181115-3-0. |
| [3] | Goto H;Nosaki K;Tomioka K et al.Growth of Core-shell InP Nanowires for Photovoltaic Application by Selective-area Metal Organic Vapor Phase Epitaxy[J].Applied Physics Express,2009,2:035004. |
| [4] | Novotny CJ;Yu ET;Yu PKL .InP nanowire/polymer hybrid photodiode[J].Nano letters,2008(3):775-779. |
| [5] | Yu, SZ;Miao, GQ;Jin, YX;Zhang, LG;Song, H;Jiang, H;Li, ZM;Li, DB;Sun, XJ .Growth and optical properties of catalyst-free InP nanowires on Si (100) substrates[J].Physica, E. Low-dimensional systems & nanostructures,2010(5):1540-1543. |
| [6] | Pemasiri K;Montazeri M;Gass R;Smith LM;Jackson HE;Yarrison-Rice J;Paiman S;Gao Q;Tan HH;Jagadish C .Carrier Dynamics and Quantum Confinement in type II ZB-WZ InP Nanowire Homostructures[J].Nano letters,2009(2):648-654. |
| [7] | Cornet DM;Mazzetti VGM;LaPierre RR .Onset of stacking faults in InP nanowires grown by gas source molecular beam epitaxy[J].Applied physics letters,2007(1):13116-1-13116-3-0. |
| [8] | Rigutti L;Bugallo A D L;Tchernycheva M et al.Si Incorporation in InP Nanowires Grown by Au-assisted Molecular Beam Epitaxy[J].Journal of Nanomaterials,2009,11:435451. |
| [9] | Spatially controlled, nanoparticle-free growth of InP nanowires[J].Applied physics letters,2003(10):2055-2057. |
| [10] | G. Radhakrishnan;A. Freundlich;B. Fuhrmann .Chemical beam epitaxy of highly ordered network of tilted InP nanowires on silicon[J].Journal of Crystal Growth,2009(7):1855-1858. |
| [11] | Tang CC.;Bando Y.;Liu ZW.;Golberg D. .Synthesis and structure of InP nanowires and nanotubes[J].Chemical Physics Letters,2003(5-6):676-682. |
| [12] | Bakkers E P A M;Verheijen M A .Synthesis of InP Nanotubes[J].Journal of the American Chemical Society,2003,125(12):3440-3441. |
| [13] | Shen GZ;Bando Y;Liu BD;Tang CC;Golberg D .Unconventional zigzag indium phosphide single-crystalline and twinned nanowires[J].The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical,2006(41):20129-20132. |
| [14] | Yujie Xiong;Yi Xie;Zhengquan Li;Xiaoxu Li;Shanmin Gao .Aqueous-Solution Growth of GaP and InP Nanowires:A General Route to Phosphide,Oxide,Sulfide,and Tungstate Nanowires[J].Chemistry: A European journal,2004(3):654-660. |
| [15] | Liu, ZP;Sun, K;Jian, WB;Xu, D;Lin, YF;Fang, JY .Soluble InP and GaP Nanowires: Self-Seeded, Solution-Liquid-Solid Synthesis and Electrical Properties[J].Chemistry: A European journal,2009(18):4546-4552. |
| [16] | Fudong Wang;William E.Buhro .Determination of the Rod-Wire Transition Length in Colloidal Indium Phosphide Quantum Rods[J].Journal of the American Chemical Society,2007(46):14381-14387. |
| [17] | Q YANG;K TANG;Q Li .The fabrication of MP (M = In and Ga) nanowires by a new Ullmann reaction[J].Nanotechnology,2004(8):918-922. |
| [18] | Wang, JL;Yang, Q;Zhang, ZD;Li, TW;Zhang, SY .Synthesis of InP nanofibers from tri(m-tolyl)phosphine: an alternative route to metal phosphide nanostructures[J].Dalton transactions,2010(1):227-233. |
| [19] | Wang J;Yang Q.A Developed UUmann Reaction to Ⅲ-Ⅴ Semiconductor Nanocrystals in Sealed Vacuum Tubes[J].Dalton Transactions,2008:6060-45066. |
| [20] | Newman R .Optical Properties of n-type InP[J].Physical Review,1958,111(06):1518-1521. |
| [21] | 赵国英,梁建,赵君芙,张华,贾伟.溶剂热法制备磷化铟纳米线[C].2010中国材料研讨会论文集,2010:1-5. |
| [22] | Gao S;Lu J;Zhao Y et al.Thermic Conversion of Benzene into 6-phenylfulvene with High Yield Mediated by GaP Nanocrystals[J].Chemical Communications,2002,23:2880-2881. |
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