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制备了CaF_2-AlF_3-SiO_2系低温共烧氧氟玻璃陶瓷材料,并且用X射线衍射仪、扫描电镜、阻抗分析仪等研究了该体系材料的烧结特性、显微结构、介电性能等特性.结果表明:该氧氟玻璃陶瓷材料可以在825 ℃烧结致密化,烧成后的样品具有低的介电常数(5.9)、低的介电损耗(<0.002)、较低的热膨胀系数(6.0×10~(-6) ℃~(-1))、足够的抗弯曲强度(150 MPa)以及较高的热导率(2 W/m·K),是一种很有应用前景的低温共烧陶瓷材料.

The CaF_2-AlF_3-SiO_2 low temperature co-fired oxyfluoride glass-ceramic system was prepared, and the sintering behavior, microstructure and dielectric properties were also studied. The results show that the oxyfluoride glass-ceramic material can be sintered at about 825 ℃ with relative low dielectric constant (5.9), low dielectric loss (<0.002), low thermal expansion coefficient (6.0×10~(-6) ℃~(-1)), enough mechanical strength (150 MPa) and high thermal conductivity (2 W/m·K), which is promising for low temperature co-fired ceramic material application.

参考文献

[1] Tummala R R .[J].Journal of the American Ceramic Society,1991,74(05):895.
[2] Jantunen H et al.[J].Journal of the European Ceramic Society,2003,23:2541.
[3] Imanaka Y.Multilayered Low Temperature Cofired Ceramic Technology (LTCC)[M].New York:springer-verlag,2005:1.
[4] 王睿 et al.[J].硅酸盐学报,2007,35(z1):125.
[5] Choi Y et al.[J].Journal of Electroceramics,2005,14:157.
[6] Valant M et al.[J].Journal of the European Ceramic Society,2006,26:2777.
[7] Kemethmüller S et al.[J].Journal of the American Ceramic Society,2007,90(01):64.
[8] Han SM.;Aydil ES. .Reasons for lower dielectric constant of fluorinated SiO2 films[J].Journal of Applied Physics,1998(4):2172-2178.
[9] Han S S et al.[J].Journal of the Electrochemical Society,1999,146(09):3383.
[10] Kolobkova E V et al.[J].Glass Physics and Chemistry,2007,33(01):8.
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