Low Temperature Epitaxial Growth of Semiconductors Using Synchrotron Radiation as a Light Source

材料科学与工程学报, 2000, 18(z2): 811-816.

^1, , ^2, , ^3,

1.Department of Electrical and Electronic Engineering, Faculty of Science and Engineering,Saga University, Saga 840-8502, Japan

2.Department of Electrical and Electronic Engineering, Faculty of Science and Engineering,Saga University, Saga 840-8502, Japan

3.Department of Electrical and Electronic Engineering, Faculty of Science and Engineering,Saga University, Saga 840-8502, Japan

Low Temperature Epitaxial Growth of Semiconductors Using Synchrotron Radiation as a Light Source

Results of our recent experiments relating to the synchrotron radiation (SR) excited growth of Ⅱ-V compounds using metalorganic sources are described. We discuss mainly the growth characteristics of films in addition to the characterization of the deposited films. ZnTe epitaxial layer without carbon and oxygen contamination is attainable even at room temperature using SR as a light source. The quantum yield for forming ZnTe molecules was estimated to be higher than 3%. Through these experiments, we propose that the SR-excited growth is a powerful technique for a novel low temperature growth of compounds.

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Low Temperature Epitaxial Growth of Semiconductors Using Synchrotron Radiation as a Light Source

参考文献