室温下将40 keV的H离子以不同剂量注入到单晶Si样品中,部分H预注入的样品又进行了190 keV O离子注入.采用光学显微镜和透射电子显微镜分析比较了注入及退火后单晶Si样品的表面损伤以及注入层微观缺陷的形貌.光学显微镜结果表明,只有高剂量H离子注入的单晶Si经过450℃退火后出现了表面发泡和剥离,而总剂量相同的H、O离子顺次注入单晶Si的样品没有出现任何表面损伤.透射电子显微镜结果表明,低剂量H离子注入单晶Si经过高温退火可以在样品内部形成一个由空腔构成的损伤带.附加O离子注入对损伤形貌产生了重要影响,空腔消失,损伤带由大量板状缺陷构成.
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