采用射频反应磁控溅射沉积了ZnO薄膜,然后在硫蒸气中于500 ℃硫化得到ZnS薄膜.用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、紫外-可见透射光谱、俄歇电子能谱(AES)和多普勒展宽谱对薄膜进行了表征.ZnO硫化转变依赖于硫化时间.当硫化时间小于18 h时,ZnO只能部分转变为ZnS.只有当硫化时间等于或大于18h时,才能完全生成六方相ZnS薄膜,沿(0 0 10)晶面择优生长,硫化前后薄膜晶粒尺寸有显著变化.所得ZnS薄膜光吸收边宽化、光透过率低,ZnS薄膜带隙为3.54～3.66 eV.
参考文献
| [1] | Rong-Wei Xuan;Jian-Ping Xu;Xiao-Song Zhang;Ping Li;Cheng-Yuan Luo;Yan-Yu Wu;Lan Li .Continuously voltage-tunable electroluminescence from a monolayer of ZnS quantum dots[J].Applied physics letters,2011(4):041907-1-041907-3. |
| [2] | Islam, M. M.;Ishizuka, S.;Yamada, A.;Sakurai, K.;Niki, S.;Sakurai, T.;Akimoto, K. .CIGS solar cell with MBE-grown ZnS buffer layer[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2009(6/7):970-972. |
| [3] | 李燕,徐海燕,徐玲,项磊.ZnS/镍锌铁氧体磁性光催化剂的制备与光催化活性[J].人工晶体学报,2011(04):995-999. |
| [4] | Patel, S.P.;Pivin, J.C.;Siva Kumar, V.V.;Tripathi, A.;Kanjilal, D.;Kumar, L. .Grain growth and structural transformation in ZnS nanocrystalline thin films[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2010(2):307-311. |
| [5] | Gayou, VL;Salazar-Hernandez, B;Constantino, ME;Andres, ER;Diaz, T;Macuil, RD;Lopez, MR .Structural studies of ZnS thin films grown on GaAs by RF magnetron sputtering[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2010(10):1191-1194. |
| [6] | Xiaochun Wu;Fachun Lai;Limei Lin;Jing Lv;Binping Zhuang;Qu Yan;Zhigao Huang .Optical inhomogeneity of ZnS films deposited by thermal evaporation[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2008(20):6455-6460. |
| [7] | Bakke J R;King J S;Jung H J et al.Atomic Layer Deposition of ZnS via In Situ Production of H2S[J].Thin Solid Films,2010,518:5400-5408. |
| [8] | 于威,高卫,吴艳华,滕晓云,傅广生.空气退火对ZnS薄膜结构和光学特性的影响[J].人工晶体学报,2012(01):59-63. |
| [9] | 夏冬林,石正忠,张兴良,王慧芳,刘俊.热处理对电沉积制备ZnS薄膜物相组成及光学性能的影响[J].人工晶体学报,2010(02):392-395. |
| [10] | Li Z Q;Shi J H;Liu Q Q et al.Effectof[Zn]/[S]Ratios on the Properties of Chemical Bath Deposited Zinc Sulffide Thin Films[J].Applied Surface Science,2010,257:122-126. |
| [11] | Gang Xiong;John Wilkinson;Brian Mischuck;S. Tuzemen;K. B. Ucer;R. T. Williams .Control of p- and n-type conductivity in sputter deposition of undoped ZnO[J].Applied physics letters,2002(7):1195-1197. |
| [12] | Hirohata K;Nishi Y;Tsukamoto N et al.Al-doped ZnO (AZO) Films Deposited by Reactive Sputtering with Unipolar-pulsing and Plasmaemission Control Systems[J].Thin Solid Films,2010,518:2980-2983. |
| [13] | Zhang RG;Wang BY;Wei L .Sulfidation growth and characterization of nanocrystalline ZnS thin films[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2008(11):1208-1211. |
| [14] | Zhang R G;Wang B Y;Wei L .Influence of RF Power on the Structure of ZnS Thin Films Grown by Sulfurizing RF Sputter Deposited ZnO[J].Materials Chemistry and Physics,2008,112:557-561. |
| [15] | Bandic(o) Z Z;Piquette E C;McCaldin J O et al.Solid Phase Recrystallization of ZnS Thin Film on Sapphire[J].Applied Physics Letters,1998,72(22):2862-2864. |
| [16] | Y. Zhang;X.Y. Dang;J.Jin;T. Yu;B.Z. Li;Q.He;F.Y. Li;Y. Sun .ZnS thin film deposited with chemical bath deposition process directed by different stirring speeds[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2010(22):6871-6875. |
| [17] | Krause-Rehberg R.;Abgarjan T.;Polity A.;Leipner HS. .Review of defect investigations by means of positron annihilation in II-VI compound semiconductors [Review][J].Applied physics, A. Materials science & processing,1998(6):599-614. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%