采用物理气相输运法( PVT),以Cr2+∶ ZnSe多晶为原料,在源区温度约为1000℃、温差为6～7℃条件下生长2周,获得了体积约为0.7 cm3的Cr2+∶ZnSe晶体.紫外-可见-近红外透过光谱显示,Cr2+∶ZnSe样品在1770nm左右出现了强吸收；Cr2+浓度在1019 atoms/cm3数量级,与原料中Cr2+浓度基本一致,反映了较低温度PVT法生长有利于获得预期的Cr2+掺杂浓度.荧光测试结果表明,Cr2+∶ZnSe样品谱线对称性好,发射峰位约在2400 nm,线宽约600 nm；室温荧光寿命为5.52×10-6s.数据分析结果表明,Cr2+∶ZnSe样品的吸收截面和发射截面峰值分别为1.1×10-18cm2和2.3×10-18 cm2.
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