阐述了Monte Carlo方法在薄膜生长中的应用和最新进展;简要论述了Monte Carlo算法的类型及各自的特点;结合MonteCarlo方法的特点,提出了模拟薄膜生长的模型以及处理方法.同时,归纳出MonteCarlo模拟薄膜生长需要解决的主要问题.
参考文献
[1] | 吴兴惠;项金钟.现代材料计算与设计教程[M].北京:电子工业出版社,2002 |
[2] | Starostenkov M D et al.Computer simulation of a thermoactivated process of atomic structure reconstruction in thin films[J].Computational Materials Science,1999,14(02):197. |
[3] | Zhang QY.;Zhao GQ.;Tang JY. .Investigation of the energetic deposition of Au (001) thin films by molecular-dynamics simulation[J].Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms,1998(1/4):289-294. |
[4] | 钟晓征;陈伟元;王豪才 .多晶体材料晶粒生长的MonteCarlo计算机模拟方法Ⅰ:模拟正常晶粒生长[J].功能材料,1999,30(03):232. |
[5] | 钟晓征;陈伟元;王豪才 .多晶体材料晶粒生长的MonteCarlo计算机模拟方法Ⅱ:模拟正常晶粒生长[J].功能材料,1999,30(03):236. |
[6] | 王晓平;赵特秀;吴逢民 .超薄膜多中心生长过程的计算机模拟[J].物理学报,1999,48(08):1412. |
[7] | 邓宁,肖鸿,陈培毅,李志坚.二维Ge岛成核早期阶段的动力学蒙特卡罗模拟[J].半导体学报,2003(z1):56-59. |
[8] | Meixner M.;Kunert R.;Scholl E. .Control of strain-mediated growth kinetics of self-assembled semiconductor quantum dots - art. no. 195301[J].Physical review, B. Condensed matter and materials physics,2003(19):5301-0. |
[9] | Mark Friesen;Charles Tahan;Robert Joynt;M. A. Eriksson .Spin Readout and Initialization in a Semiconductor Quantum Dot[J].Physical review letters,2004(3):037901.1-037901.4. |
[10] | 何为,郝智彪,罗毅.GaAs图形衬底上InAs量子点生长停顿的动力学蒙特卡罗模拟[J].半导体学报,2005(04):707-710. |
[11] | Witten T A;Sander L M .Diffusion-limited aggregation,a kinetic critical phenomenon[J].Physical Review Letters,1981,44(19):1400. |
[12] | Bruschi P.;Nannini A.;Cagnoni P. .TEMPERATURE-DEPENDENT MONTE CARLO SIMULATIONS OF THIN METAL FILM GROWTH AND PERCOLATION[J].Physical Review.B.Condensed Matter,1997(12):7955-7963. |
[13] | Voter A F .Classically exact overlayer dynamics:Diffusion of rhodium clusters on Rh(100)[J].Physical Review B,1986,34(10):6819. |
[14] | Furman I.;Biham O. .EFFECTS OF MOBILITY OF SMALL ISLANDS ON GROWTH IN MOLECULAR-BEAM EPITAXY[J].Physical Review.B.Condensed Matter,1997(12):7917-7926. |
[15] | 刘祖黎,魏合林,王汉文,王均震.薄膜生长的随机模型[J].物理学报,1999(07):1302-1308. |
[16] | Kohn W.Density function theory:fundamentals and applications[J].North Holland,1985 |
[17] | 杨宁,陈光华,张阳,公维宾,朱鹤孙.薄膜生长的理论模型与Monte Carlo模拟[J].物理学报,2000(11):2225-2229. |
[18] | Bruschi P et al.Monte Carlo simulation of polycrystalline thin film deposition[J].Physical Review B,2000,63(05):1. |
[19] | Adams J B;Wang Z Y;Li Y .Modeling Cu thin film growth[J].Thin Solid Films,2000,365:201. |
[20] | Bruschi P;Nannini A;Pito M .Three-dimensional Monte Carlo simulations of electron-migration in polycrystalline thin films[J].Computational Materials Science,2000,17(08):299. |
[21] | Landau D P;Pal S;Shim S Y .Monte Carlo simulations of film growth[J].Computer Physics Communications,1999,122(37):341. |
[22] | 叶健松,胡晓君.超薄膜外延生长的Monte Carlo模拟[J].物理学报,2002(05):1108-1112. |
[23] | Delun G et al.Growth and structure of internal Cu/Al2O3 and Cu/Al2O3 interfaces[J].Acta Materialia,1998,46:759. |
[24] | Battaile CC.;Butler JE.;Srolovitz DJ. .A KINETIC MONTE CARLO METHOD FOR THE ATOMIC-SCALE SIMULATION OF CHEMICAL VAPOR DEPOSITION - APPLICATION TO DIAMOND[J].Journal of Applied Physics,1997(12):6293-6300. |
[25] | Wang L G et al.Kinetic Monte Carlo simulation of the growth of polycrystalline Cu filn[J].Surface Science,2001,473:2538. |
[26] | Gilmer H et al.Lattice Monte Carlo models of thin film deposition[J].Thin Solid Films,2000,365:189. |
[27] | 田民波;刘德令.薄膜科学与技术手册[M].北京:机械工业出版社,1991 |
[28] | Ozawa S.;Heermann DW.;Sasajima Y. .MONTE CARLO SIMULATIONS OF FILM GROWTH[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1996(2):172-183. |
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