两步法溅射中缓冲层厚度对Ge薄膜质量的影响

人工晶体学报, 2012, 41(4): 950-955.

两步法溅射中缓冲层厚度对Ge薄膜质量的影响

关中杰 ^1, , 靳映霞 ^2, , 王茺 ^3, , 叶小松 ^4, , 李亮 ^5, , 杨宇 ^6,

1.云南大学光电信息材料研究所,昆明650091

2.云南大学光电信息材料研究所,昆明650091

3.云南大学光电信息材料研究所,昆明650091

4.云南大学光电信息材料研究所,昆明650091

5.云南大学光电信息材料研究所,昆明650091

6.云南大学光电信息材料研究所,昆明650091

基金项目: 教育部科学技术研究重点项目(210207) 云南省教育厅科学研究基金(2011Y114) 云南省自然科学基金重点项目(2008CC012) 国家自然科学基金项目(10964016,10990103)

关键词： Ge薄膜 , 低温Ge缓冲层 , 射频磁控溅射

Effects of Buffer Layer Thickness on the Quality of Ge Thin Film Grown by Two-step Sputtering

采用低温缓冲层技术制备Ge薄膜,利用AFM和Raman光谱研究缓冲层厚度对低温Ge缓冲层残余应变弛豫的影响.实验结果显示:随着缓冲层厚度的增加,残余应变弛豫度增大.在30 nm厚的低温Ge缓冲层上生长800nm厚的Ge外延层.Ge薄膜具有良好的结晶性,表面粗糙度RMS为2.06 nm.

参考文献

[1]	Xiaochen Sun;Jifeng Liu;Lionel C. Kimerling;Jurgen Michel .Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes[J].Optics Letters,2009(8):1198-1200.
[2]	Jifeng Liu;Xiaochen Sun;Rodolfo Camacho-Aguilera;Lionel C. Kimerling;Jurgen Michel .Ge-on-Si laser operating at room temperature[J].Optics Letters,2010(5):679-681.
[3]	Sorianello V;Iacovo A D;Colace L et al.Germanium on Insulator Near-infrared Photodetector Fabricated by Layer Transfer[J].Thin Solid Films,2010,518:2501-2504.
[4]	Ji F L;Douglas D C;Kazumi W et al.Tensile Strained Ge p-i-n Photodetectors on Si Platform for C and L Band Telecommunications[J].Applied Physics Letters,2005,87:011110.
[5]	Eunice S. M. Goh;T. P. Chen;C. Q. Sun;Y. C. Liu .Thickness effect on the band gap and optical properties of germanium thin films[J].Journal of Applied Physics,2010(2):024305-1-024305-5.
[6]	E. N. Kotlikov;V. A. Ivanov;V. N. Prokashev;A. N. Tropin .Study of the Optical Properties of Germanium Films in the Mid-IR Spectral Range[J].Optics and Spectroscopy,2010(6):954-957.
[7]	A.A. Akl;H. Howari .Nanocrystalline formation and optical properties of germanium thin filmsprepared by physical vapor deposition[J].The journal of physics and chemistry of solids,2009(10):1337-1343.
[8]	Ma XY;Shi WL .Investigation of the size effect on optical properties of polycrystalline Ge deposition by pulse laser deposition[J].Journal of Materials Science,2006(4):1025-1028.
[9]	Currie MT.;Langdo TA.;Leitz CW.;Fitzgerald EA.;Samavedam SB. .Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing[J].Applied physics letters,1998(14):1718-1720.
[10]	G. Vanamu;A. K. Datye;Saleem H. Zaidi .Epitaxial growth of high-quality Ge films on nanostructured silicon substrates[J].Applied physics letters,2006(20):204104-1-204104-3-0.
[11]	Halbwax M;Bouchier D;Yam V;Debarre D;Nguyen LH;Zheng Y;Rosner P;Benamara M;Strunk HP;Clerc C .Kinetics of Ge growth at low temperature on Si(001) by ultrahigh vacuum chemical vapor deposition[J].Journal of Applied Physics,2005(6):4907-1-4907-6-0.
[12]	J.M. Hartmann;A.M. Papon;V. Destefanis;T. Billon .Reduced Pressure Chemical Vapor Deposition Of Ge Thick Layers On Si(001), Si(011)and Si(111)[J].Journal of Crystal Growth,2008(24):5287-5296.
[13]	Olubuyide OO;Danielson DT;Kimerling LC;Hoyt JL .Impact of seed layer on material quality of epitaxial germanium on silicon deposited by low pressure chemical vapor deposition[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(1/2):14-19.
[14]	Z. M. Jiang;C. W. Pei;X. F. Zhou .Study of strain in partially relaxed Ge epilayers on Si(100) substrate[J].Applied physics letters,1999(3):370-372.
[15]	Tiong K K;Amirtharaj P M;Pollk F H et al.Effect of As + Ion Implantation on the Raman Spectra of GaAs " Spatial Correlation" Interpretation[J].Applied Physics Letters,1984,44(01):122-124.
[16]	Cardona M;Guntherodt.Light Scattering in Solids Ⅳ[M].Berlin Heidelberg:Springer-Verlag,1984
[17]	岳兰平,何怡贞.纳米Ge颗粒镶嵌薄膜的Raman散射光谱研究[J].物理学报,1996(10):1756-1761.
[18]	Khan A F;Mehmood M;Rana A M et al.Effect of Annealing on Structural,Optical and Electrical Properities of Nanostructured Ge Thin Films[J].Applied Surface Science,2010,256:2031-2037.
[19]	Jian Z;B(o)scher H;Falter C et al.Raman Shifts in Si Nanocrystals[J].Applied Physics Letters,1996,69(02):200-202.
[20]	Freund L B;Suresh S.Thin Film Materials-Stress,Defect Formation and Surface Evolution[M].Cambirdge University Press,2003
[21]	Cerdeira F;Buchenauer C J;Pollak F H et al.Stress-Iinduce Shifts of First-Order Raman Frequencies of Diamond and Zinc-Blende-Type Semiconductors[J].Physical Review B,1972,5(02):580-593.
[22]	J. M. Hartmann;A. Abbadie;A. M. Papon;P. Holliger;G. Rolland;T. Billon;J. M. Fedeli;M. Rouviere;L. Vivien;S. Laval .Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001) for 1.3-1.55-μm photodetection[J].Journal of Applied Physics,2004(10):5905-5913.
[23]	Shah V A;Dobbie A;Myronov M et al.Effect of Layer Thickness on Structural Quality of Ge Epilayers Grown Directly on Si(001)[J].Thin Solid Films,2011,519:7911-7917.
[24]	Strain-induced band gap shrinkage in Ge grown on Si substrate[J].Applied physics letters,2003(13):2044-2046.
[25]	Yasuhiko Ishikawa;Kazumi Wada;Jifeng Liu;Douglas D. Cannon;Hsin-Chiao Luan;Jurgen Michel;Lionel C. Kimerling .Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate[J].Journal of Applied Physics,2005(1):013501-1-013501-9-0.

上一张下一张

计量

下载量()
访问量()

作者相关

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网

两步法溅射中缓冲层厚度对Ge薄膜质量的影响

Effects of Buffer Layer Thickness on the Quality of Ge Thin Film Grown by Two-step Sputtering

参考文献