C/SiC-SiB4复合材料的制备及氧化行为

功能材料, 2008, 39(12): 1982-1988.

C/SiC-SiB4复合材料的制备及氧化行为

童长青 ^1, , 成来飞 ^2, , 殷小玮 ^3, , 刘永胜 ^4, , 张立同 ^5, , 鲁波 ^6,

1.西北工业大学,超高温结构复合材料国防科技重点实验室,陕西,西安,710072;龙岩学院,化学与材料学院,福建,龙岩,364000

2.西北工业大学,超高温结构复合材料国防科技重点实验室,陕西,西安,710072

3.西北工业大学,超高温结构复合材料国防科技重点实验室,陕西,西安,710072

4.西北工业大学,超高温结构复合材料国防科技重点实验室,陕西,西安,710072

5.西北工业大学,超高温结构复合材料国防科技重点实验室,陕西,西安,710072

6.上海大学,仪器分析与研究中心,上海,200444

基金项目: 国家自然科学基金(90405015) 国家自然科学基金(50425208)

关键词： C/SiC-SiB4复合材料 , PIP , CVI , 氧化

Processing and oxidation behaviour of C/SiC-SiB4 composite

在多孔C/SiC中渗入SiB4微粉后,采用先驱体浸渍裂解(PIP)结合化学气相渗透(CVI)法进行致密化制备C/SiC-SiB4复合材料.利用XRD、EDS、SEM分析了材料的组分及微结构.研究了材料在500～1000℃静态空气的氧化行为,并与致密C/SiC复合材料的氧化行为进行了比较.结果表明,SiB4主要渗入到纤维束间,它与随后PIP及CVI法引入的SiC较好地结合在一起.在氧化过程中,SiB4起自愈合作用,它能减缓碳纤维和界面的氧化.在600～900℃氧化10h后,C/SiC-SiB4的失重率均比致密C/SiC小,抗弯强度没有明显降低,且均比致密C/SiC高.

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