用气相方法在较低的温度(900℃)下在单晶硅基片表面制备出金属钨的单晶纳米线阵列, 用扫描电子显微镜(SEM)、透射电子显微镜(TEM)和X--ray衍射(XRD)等手段对其进行了分析和表征.结果表明: 在900℃制备的阵列单晶钨纳米线沿<111>方向生长,具有bcc结构, 直径约为150 nm, 长度为10--30 μm.
Metallic tungsten array can be successfully synthesized on the silicon substrate by vapor method at low temperature (900 °C). SEM、TEM and XRD analysis results of tungsten nanowires synthesized under 900 °C show: the synthesized nanowires have diameters of 150 nm, and lengths of 10- 30 μm. the nanowires show well-defined bcc single-crystalline structure with growth direction along <111>.
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