用高温固相烧结法制备了V~(5+)掺杂的Bi_3.25La_0.75Ti_3O_(12)(BLT)层状结构铁电陶瓷.利用XRD对Bi_3.25La_0.75Ti_(3-x)VxO_(12+x/2)(BLTV-x)材料结构进行了晶相分析,结果表明所制备的陶瓷均具有单一的正交相结构.样品的介电常数温度谱显示:V~(5+)掺杂提高了材料的介电常数,x=0.03时介电常数最大,但样品的居里温度并没有发生大的变化.样品的介电损耗谱表明:由于V~(5+)掺入,由氧空位引起的样品介电损耗被极大的压制,在x=0.06时损耗最小.通过对材料的直流电导与温度关系的Arrhenius拟合,分析了样品的导电机理,结果显示V~(5+)的掺杂大大降低了材料中氧空位的浓度,使得陶瓷样品的电性能得到了很好的改善.
V~(5+)-doped Bi_3.25La_0.75Ti_3O_(12) layer-structured ferroelectric ceramics were prepared by the high temperature solid-state reaction method. Their crystal structure was analyzed by X-ray diffraction, which shows that Bi_3.25La_0.75Ti_(3-x)VxO_(12+x/2) material has a single orthorhombic structure. Temperature dependence of dielectric constants for Bi_3.25La_0.75Ti_(3-x)VxO_(12+x/2) ceramics show with V~(5+) doping, the material dielectric constant increases, reaching to the highest at x=0.03, but the Curie temperatures had less change. Dielectric loss of BLTV ceramics as a function of temperature show with the incorporation of V~(5+), the dielectric loss caused by the migration of oxygen vacancy was greatly suppressed,which got to the minimum at x=0.06. Electronic conductor mechanism of Bi_3.25La_0.75Ti_(3-x)VxO_(12+x/2) was analyzed by the Arrhenius fit of direct current conductivity vs temperature, show that with the doping of V~(5+) decreases the concentration of oxygen vacancies, and thus the electric properties of the sample was greatly improved.
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