材料期刊网

TiO2 thin film has attracted considerable attention in recent years, due to its different refractive index and transparency with amorphous and different crystals in the visible andnearinfrared wavelength region, high dielectric constant, wide band gap, high wear resistance and stability, etc, for which make it being used in many fields. This paper aims to investigate the optical characterization of thin film TiO2 on silicon wafer. The TiO2 thin films were prepared by DC reactive magnetron sputtering process from Ti target. The reflectivity of the films was measured by UV-3101PC, and the index of refraction (n) and extinction coefficient (k) were measured by n & k Analyzer 1200.