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利用稀土金属Tb作为催化剂,通过氨化磁控溅射在Si(111)衬底上的Ga203/Tb薄膜制备出GaN纳米棒.X射线衍射和傅里叶红外吸收谱测试结果表明,制备的样品为六方结构的GaN.利用扫描电子显微镜、透射电子显微镜和高分辨透射电子显微镜对样品进行测试,结果显示样品为单晶结构的纳米棒,直径为80~200 nm,长度达几十微米.最后简单地讨论了GaN纳米棒的生长机制.

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