溶剂熔区移动法制备Cd0.9Zn0.1Te晶体及性能研究

人工晶体学报, 2015, 44(4): 857-862.

溶剂熔区移动法制备Cd0.9Zn0.1Te晶体及性能研究

时彬彬 ^1, , 闵嘉华 ^2, , 梁小燕 ^3, , 张继军 ^4, , 王林军 ^5, , 邢晓兵 ^6, , 段磊 ^7, , 孟华 ^8, , 杨升 ^9,

1.上海大学电子信息材料系,上海,200444

2.上海大学电子信息材料系,上海,200444

3.上海大学电子信息材料系,上海,200444

4.上海大学电子信息材料系,上海,200444

5.上海大学电子信息材料系,上海,200444

6.上海大学电子信息材料系,上海,200444

7.上海大学电子信息材料系,上海,200444

8.上海大学电子信息材料系,上海,200444

9.上海大学电子信息材料系,上海,200444

基金项目: 国家自然科学基金(11275122,51472155,11375112) 上海市科委重点项目(11530500200) 上海市教育委员会科研创新项目(12ZZ096)

关键词：溶剂熔区移动法 , Cd0.9Zn0.1Te , 红外透过率 , PICTS

Fabrication and the Properties of Cd0.9Zn0.1Te Crystal by Traveling Solvent Melting Zone Method

Keywords： traveling solvent melting zone method , Cd0.9Zn0.1Te , IR transmittance , PICTS

用溶剂熔区移动法制备了掺In的Cd0.9Zn01Te晶体,晶体生长温度800℃,温度梯度为20℃/cm,生长速度0.4 mm/h.测试了晶体的Te夹杂情况、红外透过率图谱、Ⅰ～Ⅴ特性曲线和PICTS特性,并以1115℃下用VB法生长的掺In的Cd0.9Zn0.1Te晶体做为参照,对比了两者性能.结果表明,溶剂熔区移动法制备的晶体Te夹杂的密度和体积百分比比VB法晶片低,但是Te夹杂的尺寸要比VB法晶体大;溶剂熔区移动法晶体的红外透过率比VB法晶体高;溶剂熔区移动法晶体电阻率比VB法晶体高了一个数量级;PICTS测试发现,溶剂熔区移动法晶体内主要的缺陷密度低于VB法晶体.

参考文献

[1]	U.N. Roy;S. Weiler;J. Stein .Growth and interface study of 2 in diameter CdZnTe by THM technique[J].Journal of Crystal Growth,2010(19):2840-2845.
[2]	Chen H;Awadalla SA;Iniewski K;Lu PH;Harris F;Mackenzie J;Hasanen T;Chen W;Redden R;Bindley G .Characterization of large cadmium zinc telluride crystals grown by traveling heater method[J].Journal of Applied Physics,2008(1):14903-1-14903-5-0.
[3]	Wang LJ.;Shi WM.;Qian YB.;Min JH.;Liu DH.;Xia YB.;Sang WB. .Electrical properties of contacts on P-type Cd0.8Zn0.2Te crystal surfaces[J].Nuclear Instruments and Methods in Physics Research, Section A. Accelerators, Spectrometers, Detectors and Associated Equipment,2000(3):581-585.
[4]	Gamal GA;Abou Zied M;Ebnalwaled AA .Transport properties of Cd0.8Zn0.2Te crystals[J].Physica, B. Condensed Matter,2007(1/2):285-291.
[5]	Yue Wang;Katsuaki Kudo;Yuko Inatomi;Rongbin Ji;Tetsuichi Motegi .Growth interface of CdZnTe grown from Te solution with THM technique under static magnetic field[J].Journal of Crystal Growth,2005(3/4):406-411.
[6]	Elhadidy H;Franc J;Moravec P;Hoschl P;Fiederle M .Deep level defects in CdTe materials studied by thermoelectric effect spectroscopy and photo-induced current transient spectroscopy[J].Semiconductor Science and Technology,2007(5):537-542.
[7]	Rakhshani AE. .Photo-induced current transient spectroscopy (PICTS) of deep levels in electrodeposited CdTe films[J].Physica Status Solidi, A. Applied Research,1998(1):85-96.
[8]	王焱,闵嘉华,梁小燕,张继军.垂直布里奇曼法生长CdZnTe晶体的径向溶质偏析之有限元分析法模拟[J].功能材料,2011(11):2073-2077.
[9]	Rakhshani AE. .Photo-induced current transient spectroscopy (PICTS) of deep levels in electrodeposited CdTe films[J].Physica Status Solidi, A. Applied Research,1998(1):85-96.

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