利用电子背散射衍射(EBSD)和取向成像(OIM)技术研究了形变量及退火时间对H68黄铜晶界网络的影响.结果显示,形变量对处理后样品的晶界特征分布及晶粒尺寸和晶粒团簇尺寸都有显著影响,而退火时间(10 min～3 h)所产生的影响不明显；其中经5％冷轧及在550℃下退火不同时间都能够显著提高H68黄铜的低∑CSL晶界比例到80％以上,晶界网络中形成了大尺寸的互有∑3n(n=1,2,3……)取向关系晶粒的团簇.
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