采用一种新的界面无氧化方法,将氮化硅陶瓷浸入铝熔液后移动以除去界面氧化膜,采用X射线衍射、扫描电子显微镜及透射电子显微镜等方法研究氮化硅陶瓷和铝熔液之间的界面反应.研究结果表明,该方法能够有效除去界面氧化膜,使铝和氮化硅陶瓷直接反应生成AlN,但反应很缓慢,明显慢于Si_3N_4/Al薄膜体系以及压实的氮化硅-铝混合粉末体系的反应,界面存在着未反应、铝原子直接生长于氮化硅晶体之上的界面的连接状态.氮化硅陶瓷与铝的直接反应一方面会破坏氮化硅晶格结构,使氮化硅陶瓷腐蚀,缩短使用寿命;另一方面却可促进氮化硅和铝的润湿及连接,有利于制备高性能复合材料.
A new method-inserting Si_3N_4 substrate into liquid aluminum directly-was applied to prevent the formation of oxide at interface. The bonding interfaces were analyzed by XRD, SEM and TEM. Research results show that there is no oxide at the interfaces and Si_3N_4 ceramics react directly with aluminum to form AlN. But the interaction is slower than the interaction in the Si_3N_4/Al film system and in Si_3N_4 powder-Al powder mixture after pressed. Even it was found aluminum atoms grow on Si3N4 ceramics directly at some interfaces. The direct interaction of Si_3N_4 ceramics and aluminum, on the one hand, can rot Si_3N_4 ceramics and shorten their lives; on the other hand, it can promote wetting and bond between Si_3N_4 ceramics with liquid aluminum, propitious for preparation of Si_3N_4/Al composite with high performance.
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