利用粉末冷压成型及真空烧结制备了不同Bi掺杂量的Mg-Si-Sn-Bi材料,并对制备材料组成和热电性能进行研究.结果表明,制备材料由Mg2Sn、Mg2Si和Mg2(Si,Sn)固溶体相组成.随测试温度的增加,制备材料的电阻率都急剧减小,这是典型的半导体特征.在研究范围内,掺杂Bi元素含量增加,制备材料的电阻率开始逐渐减小,但Bi掺杂量增加到一定值后,材料的电阻率又增加,而且掺杂后的材料电阻率都低于未掺杂的.制备材料的Seebeck系数是负值,表明这些材料都为n型半导体.对于掺杂Bi的材料,随着测试温度由室温增加到730 K,测得的Seebeck系数绝对值开始时轻微增加,约在240～270 K达到最大值,再随着温度增加,Seebeck系数绝对值又显著单调减小.对于掺杂Bi元素的材料,随Bi掺杂量的增加,Seebeck系数的绝对值先减少后增加,这是掺杂造成载流子浓度增加和散射过程加大相互竞争的结果.掺杂Bi的Mg-Si-Sn材料的功率因子都高于未掺杂的材料,且Bi掺杂量增加,制备材料的功率因子显著增加.对于1.29at％ Bi和1.63at％ Bi掺杂量的材料,功率因子分别在500 K和530 K存在一个极大值.
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