本文提出两步法制备多晶硅表面绒面技术,用两次化学腐蚀修饰多晶硅片的表面。实验中首先采用腐蚀液HF/NaNO2/H2O对多晶硅表面进行腐蚀,然后采用腐蚀液HF/HNO3/（NH4）2C2O4/H2O对其表面进一步修饰。通过多晶硅SEM表面形貌图分析,两步法修饰的多晶硅表面有形状如蚯蚓状的腐蚀坑,腐蚀坑的深度和分布密度相对较大。通过反射谱分析了多晶硅片表面陷光效果,并与用其它方法修饰的硅表面陷光效果进行了对比,与传统配方HF/HNO3/H2O获得的多晶硅表面相比,综合平均反射率下降了7%左右。这种方法获得的多晶硅表面能有效收集太阳光,有利于提高太阳能电池的转换效率。
Mc-Si wafers were etched by two-step method,which means etching by solution HF/HNO3/（NH4）2C2O4/H2O after by solution HF/NaNO2/H2O for a short time.The textured surfaces were analyzed by scanning electron microscopy（SEM） and the light trapping of the wafer surfaces by reflection spectroscopy.Our results demonstrated that the corrosion pits like many worms are more uniform,dense,deep,and the reflectance is 7% lower than that by using the traditional method.So the mc-Si wafers etched by two-step method are good at light trapping and production efficiency for mc-Si solar cells.
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